Abstract: Disclosed embodiments provide techniques for monitoring, detecting, predicting, and mitigating electrostatic electricity accumulation. Electrostatic electricity is detected within a premises, via multiple electrostatic electricity sensors. The electrostatic electricity sensors, also referred to as electrostatic charge sensors can detect electrostatic electricity and/or electrostatic potential. Disclosed embodiments acquire electrostatic electricity data from multiple sensors. Other mechanical activity is also acquired via sensors and/or computer vision techniques. The mechanical activity can include motion of machines and/or people. Disclosed embodiments correlate levels of electrostatic electricity data to mechanical activity using machine learning. The machine learning system is used to predict future levels of electrostatic electricity based on proposed and/or mechanical activity, as well as automatically invoke mitigation steps and generate alert messages.

Abstract: A valid combination of products is constructed from a set of products identified by a retailing backend system. The valid combination satisfies a condition of an offer. A product in the combination of product is a physical product located in a physical store. A social sentiment towards the product in social media data of a shopper is evaluated, and a rating of the product is computed using the evaluation. A location of the product in the store is obtained from the retailing backend system. The location of the product is overlaid on a view of the store, where the view is from a perspective of a location of the shopper, the shopper being physically situated in the store.

Abstract: One or more computer processors detect a computing device within a proximity to a rollable device. The one or more computer processors determine a location and an orientation of the rollable device relative to the computing device. The one or more computer processors attach the rollable device to the computing device utilizing the set of biometric locks engaged programmatically such that at least one side of the rollable device is locked and hinged to the computing device. The one or more computer processors responsive to the rollable device attached to a side of the computing device, extend a display area of the computing device to the rollable device.

Abstract: A computer-implemented method for airflow control for agricultural pollination is disclosed. The computer-implemented method includes performing image analysis on an agricultural image to determine a type and classification of one or more plants in the agricultural image, determining one or more pollination requirements for the one or more determined plants, determining one or more current airflow parameters within a predetermined area of the one or more plants in the agricultural image, determining one or more optimal airflow parameters based on the type of plants in the agricultural image, the classification of plants in the agricultural image, the one or more pollination requirements for the plants in the agricultural image, and the one or more current airflow parameters, and generating an automatic airflow adjustment model for optimizing the airflow parameters for the plants based, at least in part, on the one or more determined optimal airflow parameters.

Abstract: A method of making semiconductor quantum wires, and a light emitting device employing such wires, employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer is anodized in 20% aqueous hydrofluoric acid to produce a layer 5 microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. When excited, the etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.

Abstract: The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI C-MOS devices and bipolar transistors. Alternatively, the method of the invention can be used for the manufacture of e.g. pyroelectric devices.

Abstract: A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer (5) microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increase porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to from with diameter less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.

Abstract: A method of making semiconductor quantum wires employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer is anodised in 20% aqueous hydrofluoric acid to produce a layer microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.

Abstract: In a method of fabricating semiconductor devices, eg infra-red charge coupled devices (IRCCDs), the invention relates to the provision of a region containing a first species of ionized dopant with a body of semiconductor material in which the device is being fabricated, in which diffusion of this ionized dopant creates an internal electric field which provides a barrier against the penetration of a second relatively faster-diffusing species of ionized dopant into a selected region of the semiconductor body. In the method described in its application to the fabrication of a monolithic IRCCD, the second species of ionized dopant is introduced into detector regions of the body of semiconductor material to render them sensitive to infra-red radiation, and the barrier provided by diffusion of the first species of the ionized dopant serves to prevent the penetration of the second dopant species into the active charge storage and transfer channels of the CCD.