Abstract: A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being formed in the region forming the base of the transistor and being separated from the base by an isolation ring. The contact between the emitter and the other electrode are integral, but are insulated from the isolation ring.

Abstract: The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400.degree. C. to 525.degree. C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550.degree. C. prior to metallization and alloying the metal at less than 425.degree. C.

Abstract: A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.

Abstract: A semiconductor triac comprises means for switching the device from a conducting state to a blocking state. The means can be characterized as being a gate region which is substantially aligned with each of two anode regions. Each of the anode regions is adjacent a different one of two major opposing surfaces and are substantially misaligned with respect to each other.

Abstract: Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250.degree. C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250.degree. C. and raising the temperature of said structure to between 900.degree. C. and 1300.degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.

Abstract: A semiconductor device comprises a body of semiconductor material having a PN junction terminating at a major surface thereof. At least one field limiting ring is within the body and extends around a portion of the PN junction. Each field limiting ring is spaced apart from the surface.

Abstract: A gate turn-off silicon controlled rectifier comprises a four-layer regenerative portion and a four-layer buffer portion having reduced regenerative capability. The buffer portion is positioned such that when a turn-off pulse is applied to the device it is the last portion which conducts current.