Abstract: Flexible form fitting seamless gloves made from an elastomeric polyurethane material containing fiber reinforcements. The material forming the back of the hands of the gloves has a thickness of 0.05 to 0.45 mm a water vapor permeability of 75 to 200, a hydrostatic head of 300 to 700 cm of water, a tensile tear factor of 0.20 to 1.20, and initial modulus at 25% elongation of less that 0.35 kg/cm and a elongation at break of at least 200%.

Abstract: Current flow through the base region of a hot charge-carrier transistor is by hot majority charge-carriers (i.e. hot electrons for a hot electron transistor) which are injected into the base region at an emitter-base barrier region. This barrier region is doped with an impurity of the opposite conductivity type (p type for a hot electron transistor) and is sufficiently thin as to form a bulk unipolar diode with an adjacent part of the base region. In accordance with the invention, the emitter-base barrier region is of different bandgap semiconductor material (for example, gallium aluminum arsenide) compared with that (for example, gallium arsenide) of the base region so as to form a heterojunction. The barrier height of this barrier region is determined in part by the opposite-type doping and in part by the heterojunction and can be made large so as to increase the energy of the injected charge-carriers and hence the collector efficiency of the transistor.