Abstract: A method of manufacturing a stamp for imprint lithography is described. The method includes coating a master with a layer system, comprising a first layer and a second layer, the second layer being on top of the first layer, the master providing a template of an imprint structure. The method further includes providing a stabilization element over the second layer, the stabilization element having a higher bending resistance than the second layer, and separating the master from the layer system to expose the imprint structure.

Abstract: A method for producing a flexible device is described. The method includes providing a support substrate, coating the support substrate with an adhesive layer, providing a device having a microstructure on the adhesive layer, attaching a flexible substrate to the device, and removing the adhesive layer.

Abstract: An electronic device (205) is attached to a container (200) that carries a lithography mask (201) through a semiconductor factory (100) form a first station (110) to a second station (120). In the device, a receiver unit (210) receives first data (111) indicating how the first station has used the mask in a first process; a memory unit (220) temporarily stores the first data; a processor unit (230) processes the first data and provides second data (122) indicating how the second station uses the mask in a second future process; and a transmitter unit (240) transmits the second data to the second station or to a factory host.

Abstract: An apparatus for compensating light exposure on different, subsequently irradiated target areas (11, 12) in a photosensitive medium (2) on a semiconductor wafer (1). In order to improve exposure dose uniformity the apparatus comprises a mask filter (9) with a plurality of oblong transparent (31) and oblong opaque elements (32; 41) inserted between a light source (3) and said photosensitive medium (2) so that light (4) traverses through said plurality of transparent elements (31) to expose the photosensitive medium. Each of said plurality of oblong opaque elements (32; 41) is rotatable around a longitudinal axis (42) so as to define the area masked by the projection of the opaque element on the photosensitive medium and to continuously adjust a ratio between irradiated and non-irradiated areas on the photosensitive medium.

Abstract: A semiconductor method for reducing charge damage during plasma etch processing is disclosed. Structures (22, 26, 28) for accumulating charge during plasma etch processing are provided on a semiconductor wafer (10), the structures (22, 26, 28) being electrically connected to device structures (30, 32).

Abstract: A metrology and probe chuck (100) holds a flat object (150), such as a semiconductor wafer (150) at the backside (152). The chuck has, supported on a base plate (105), a plurality of pins (110-n) to receive partial forces (Fn) from the backside (152) and a plurality of piezoelectric elements (120-n) attached to the pins to sense the partial forces (Fn) applied from the object (150) to the pins (110-n). The piezoelectric elements (120-n) apply partial displacements (Bn) of the pins (110-n) to act on selected areas of the object (150) and thereby compensate for irregularities in the backside contour.

Abstract: Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.

Abstract: An apparatus for compensating light exposure on different, subsequently irradiated target areas (11, 12) in a photosensitive medium (2) on a semiconductor wafer (1). In order to improve exposure dose uniformity the apparatus comprises a mask filter (9) with a plurality of oblong transparent (31) and oblong opaque elements (32; 41) inserted between a light source (3) and said photosensitive medium (2) so that light (4) traverses through said plurality of transparent elements (31) to expose the photosensitive medium. Each of said plurality of oblong opaque elements (32; 41) is rotatable around a longitudinal axis (42) so as to define the area masked by the projection of the opaque element on the photosensitive medium and to continuously adjust a ratio between irradiated and non-irradiated areas on the photosensitive medium.

Abstract: The present invention is related to a method of monitoring a semiconductor wafer (10) plasma etch process, comprising the steps of projecting light (12) on a wafer surface (14) during plasma etching, so that the light (12) is scattered by the wafer surface (14), detecting the scattered light (16), determining intensities of the detected light with dependence on at least one varying parameter, thereby creating a spectrum, and comparing the spectrum with stored data. The present invention further relates to a system for monitoring a semiconductor wafer plasma etch process.

Abstract: A method of processing a semiconductor wafer (10) is provided. The method comprises the steps of: providing a semiconductor wafer (10) as a semiconductor substrate (12), preprocessing the semiconductor wafer (10) by depositing on the semiconductor wafer (10) at least one additional layer (14, 16), and further processing the preprocessed semiconductor wafer (10). The preprocessing is accomplished in a first factory (18) and the further processing is accomplished in a second factory (20). The present invention is further related to a preprocessed semiconductor wafer (10) an to a system for processing a semiconductor wafer (10).

Abstract: Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.

Abstract: A wafer processing equipment comprises a track (10) for transporting wafers, a wafer launch station (20) for launching wafers into a section of said track (10), a first wafer processing tool (30) for performing a first process to wafers in said section of said track (10), a buffer (40) for storing wafers processed by said first wafer processing tool (30), a second wafer processing tool (50) for performing a second process to wafers processed by said first wafer processing tool (30), and control means (70) for controlling said wafer launch station (20) such that every wafer launched by said launch station (20) is processed by said second processing tool (50) within a predetermined time window.

Abstract: In a semiconductor device, a contact stud (100) contacts a semiconductor substrate (10); the stud is embedded in an insulating structure with a first insulating layer (20) and a second insulating layer (20′). During manufacturing, (a) the first layer (20) is provided above the substrate (10); (b) a hole in the first layer (20) exposes a portion of the upper surface of the substrate to receive the stud; (c) a contact material (30, 40) is provided at the top of the resulting structure; (d) a first chemical-mechanical polishing (CMP) removes the contact material from the surface of the first layer (20) outside the hole; (e) residuals (50) of the contact material are cleaned away from the upper surface; (f) the second insulating layer (20′) is provided at the surface of the resulting structure; (g) and further polishing is applied.

Abstract: In a semiconductor device, a contact stud (100) contacts a semiconductor substrate (10); the stud is embedded in an insulating structure with a first insulating layer (20) and a second insulating layer (20′). During manufacturing, (a) the first layer (20) is provided above the substrate (10); (b) a hole in the first layer exposes a portion of the upper surface of the substrate to receive the stud; (c) a contact material (30, 40) is provided at the top of the resulating structure; (d) a first chemical-mechanical polishing (CMP) removes the contact material from the surface of the first layer outside the hole; (e) residuals (50) of the contact material are cleaned away from the upper surface; (f) the second insulating layer (20′) is provided at the surface of the resulting structure; (g) and further polishing is applied.

Abstract: A semiconductor structure and a method for reducing charge damage during plasma etch processing are disclosed. Structures (22, 26, 28) for accumulating charge during plasma etch processing are provided on a semiconductor wafer (10), the structures (22, 26, 28) being electrically connected to device structures (30, 32).

Abstract: A lithographic tool can be adjusted by inspecting wafer images of an defect inspection tool and correlating the wafer images with images from a reference library in a database. Each reference image in the database corresponds to an initially measured amount of miss adjustment of lithographic tool parameters. The lithographic tool is adjusted automatically according to the reference image that is found to have the greatest resemblance to the wafer image. Time for adjusting is saved, operator staff needed is reduced, and objective determination criteria provide high wafer quality and yield.

Abstract: An electronic device (205) is attached to a container (200) that carries a lithography mask (201) through a semiconductor factory (100) form a first station (110) to a second station (120). In the device, a receiver unit (210) receives first data (111) indicating how the first station has used the mask in a first process; a memory unit (220) temporarily stores the first data; a processor unit (230) processes the first data and provides second data (122) indicating how the second station uses the mask in a second future process; and a transmitter unit (240) transmits the second data to the second station or to a factory host.

Abstract: A lithography chuck (100) holds a flat object (150), such as a semiconductor wafer (150) at the backside (152). The chuck has, supported on a base plate (105), a plurality of pins (110-n) to receive partial forces (Fn) from the backside (152) and a plurality of piezoelectric elements (120-n) attached to the pins to sense the partial forces (Fn) applied from the object (150) to the pins (110-n). The piezoelectric elements (120-n) apply partial displacements (Bn) of the pins (110-n) to act on selected areas of the object (150) and thereby compensate for irregularities in the backside contour.