Abstract: A polyamide having a viscosity of between about 20 and about 40 FAV and a number average molecular weight of between about 9,000 and about 16,000 grams per mole is provided. The polyamide also includes un-terminated endgroups, where a difference between a concentration of carboxylic acid endgroups and a concentration of amine endgroups is about 5 meq/kg or less.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: The invention includes a method of forming a magnetoresistive memory device. A trench is formed in an insulative material, and the trench is partially filled with a first magnetic material to narrow the trench. The narrowed trench is at least partially filled with a conductive material. A second magnetic material is formed over the conductive material. A non-magnetic layer is formed over the second magnetic material. A third magnetic material is formed over the non-magnetic layer. The conductive material and the first and second magnetic materials are incorporated into a sense portion of the magnetoresistive memory device. The third magnetic material is incorporated into a reference portion of the magnetoresistive memory device.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: A photoresist etching process and system can be used for the etching of non-planar or three-dimensional surfaces by using a non-planar shaped fiber optic array or fiber optic panel. The array or panel has a contour or shape that may nest a non-planar or three-dimensional article or surface. The non-planar or three-dimensional article or surface has a photoresist composition on its surface facing the optical fibers of the fiber optic array or panel, and the article or surface is nested against the contour or shape of the array or panel. Radiation is transported through the optical fibers and exposes the photoresist composition. The optical fiber array may perform an image-wise exposure of the photoresist composition by appropriate blockage of the radiation before it enters or as it enters a distal end of the optical fibers.

Abstract: The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

Abstract: A photoresist etching process and system can be used for the etching of non-planar or three-dimensional surfaces by using a non-planar shaped fiber optic array or fiber optic panel. The array or panel has a contour or shape that may nest a non-planar or three-dimensional article or surface. The non-planar or three-dimensional article or surface has a photoresist composition on its surface facing the optical fibers of the fiber optic array or panel, and the article or surface is nested against the contour or shape of the array or panel. Radiation is transported through the optical fibers and exposes the photoresist composition. The optical fiber array may perform an image-wise exposure of the photoresist composition by appropriate blockage of the radiation before it enters or as it enters a distal end of the optical fibers.

Abstract: A power transformer circuit (100) includes a capacitor (120) and a resonator (140). The resonator (140) is coupled in series with the capacitor (120) and is operable to provide a substantially inductive impedance between its terminals (142,144). Resonator (140) is preferably implemented as a piezoelectric lithium niobate resonator that is operated in a thickness-shear mode. In a preferred embodiment, power transformer circuit (100) is employed as a series resonant output circuit in an electronic ballast (500) for powering at least one gas discharge lamp (30).

Abstract: A high frequency acoustic wave piezoelectric device (10) having parallel etched channels cut into a surface of a piezoelectric substrate so as to form micromachined ridges (20). Top electrodes (30) are located on tops (26) of the ridges (20) and bottom electrodes (32) are located on bottoms of the channels in spacings (22) between ridges (20). The top and bottom electrodes (30, 32) are offset from each other and substantially non-opposing. The electrodes (30, 32) generate a sufficient vertical electrical field (38) when driven to cause the ridges (20) to resonate. A height (28) of the ridges (20) define the operating frequency. The ridges (20) can be made small enough to produce frequencies well over 100 MHz in a fundamental bulk acoustic wave mode.