Abstract: Semiconductor process excursions may be monitored by fabricating functional circuitry on a plurality of semiconductor devices and then testing the functional circuitry of the plurality of semiconductor devices using a sequence of test patterns. A cumulative failure curve may be determined that has points of discontinuity based on results of testing with the sequence of test patterns. A point of discontinuity magnitude at a selected location in the cumulative failure curve may be compared to an expected discontinuity magnitude. Process excursion analysis may be indicated when a point of discontinuity magnitude exceeds an expected magnitude threshold.

Abstract: Integrated circuits and methods for deactivating user circuit operation with one or more wide channel sensing transistors biased to an on condition for exposure to total ionizing dose and then to an off condition for measurement and comparison of a leakage current or threshold voltage parameter to a predetermined reference, and a deactivation circuit selectively disables operation of the user circuit if the sensed parameter is greater than or equal to the reference.

Abstract: Semiconductor process excursions may be monitored by fabricating functional circuitry on a plurality of semiconductor devices and then testing the functional circuitry of the plurality of semiconductor devices using a sequence of test patterns. A cumulative failure curve may be determined that has points of discontinuity based on results of testing with the sequence of test patterns. A point of discontinuity magnitude at a selected location in the cumulative failure curve may be compared to an expected discontinuity magnitude. Process excursion analysis may be indicated when a point of discontinuity magnitude exceeds an expected magnitude threshold.

Abstract: A method includes testing to failure a plurality of semiconductor test structures, measuring a parameter of each semiconductor test structure after experiencing a failure, and generating a cumulative probability distribution function (CPDF) of cumulative probability versus the measured parameter after failure for the plurality of semiconductor test structures. The method further includes performing simulations for a circuit having an area using a model of a transistor that mimics the failure to determine a parameter threshold value that defines a minimum acceptable performance level of the circuit, determining a cumulative probability value from the CPDF that a transistor will not have the parameter at a level below the parameter threshold value, adjusting a value of the area of the circuit based on the cumulative probability value, and computing a first reliability value based on the adjusted area value.

Abstract: A method includes testing to failure a plurality of semiconductor test structures, measuring a parameter of each semiconductor test structure after experiencing a failure, and generating a cumulative probability distribution function (CPDF) of cumulative probability versus the measured parameter after failure for the plurality of semiconductor test structures. The method further includes performing simulations for a circuit having an area using a model of a transistor that mimics the failure to determine a parameter threshold value that defines a minimum acceptable performance level of the circuit, determining a cumulative probability value from the CPDF that a transistor will not have the parameter at a level below the parameter threshold value, adjusting a value of the area of the circuit based on the cumulative probability value, and computing a first reliability value based on the adjusted area value.

Abstract: Integrated circuits and methods for deactivating user circuit operation with one or more wide channel sensing transistors biased to an on condition for exposure to total ionizing dose and then to an off condition for measurement and comparison of a leakage current or threshold voltage parameter to a predetermined reference, and a deactivation circuit selectively disables operation of the user circuit if the sensed parameter is greater than or equal to the reference.

Abstract: Systems and methods for identification of outlier semiconductor devices using data-driven statistical characterization are described herein.

Abstract: Systems and methods for identification of outlier semiconductor devices using data-driven statistical characterization are described herein.