Abstract: Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate from the III-Nitride epitaxial layer(s), processing the III-Nitride epitaxial layer(s) to derive an array of III-Nitride islands, establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands, arranging the carrier wafer relative to a host wafer to position the array of metal-coated III-Nitride islands on a surface of the host wafer, causing the array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond, and removing the carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer. Additional embodiments are disclosed.

Abstract: The present disclosure describes the design, fabrication, and demonstration of a compact spectroscopic analysis system that utilizes a linear variable filter chip attached directly over an image sensor array, and an integrated broadband LED illuminator that supplies light from the edge of the system to provide a low vertical dimension. The instrument is capable of accurately measuring the optical absorption spectra of colored liquids or the scattered spectra from solid objects that are placed in the illumination pathway. Due to the small vertical thickness of the system, the low cost of its components, and the accuracy with which it renders spectra in comparison to conventional spectrometers, we envision potential incorporation of the system into mobile communication devices, such as smartphones and tablets, as a means for providing a dedicated sensor for health diagnostic, environmental monitoring, and general-purpose color sensing applications.

Abstract: This disclosure relates to semiconductor quantum cascade lasers (QCLs). A three-terminal QCL device is disclosed. The three-terminal QCL device includes a unipolar multi-period quantum cascade laser structure embedded in a bipolar structure having three terminals providing at least two independently controllable biases to the QCL device for adjusting the lasing intensity and for tuning the lasing wavelength of the QCL device. The three-terminal QCL device further includes a quantum impedance matching structure for achieving high efficiency carrier injection and lowering lasing threshold. In addition, the multi-period quantum cascade laser structure is selectively doped to provide near charge neutrality during operation. The three-terminal QCL may further be controlled to achieve simultaneous dual- or multi-color lasing.

Abstract: This disclosure relates to semiconductor quantum cascade lasers (QCLs). A three-terminal QCL device is disclosed. The three-terminal QCL device includes a unipolar multi-period quantum cascade laser structure embedded in a bipolar structure having three terminals providing at least two independently controllable biases to the QCL device for adjusting the lasing intensity and for tuning the lasing wavelength of the QCL device. The three-terminal QCL device further includes a quantum impedance matching structure for achieving high efficiency carrier injection and lowering lasing threshold. In addition, the multi-period quantum cascade laser structure is selectively doped to provide near charge neutrality during operation. The three-terminal QCL may further be controlled to achieve simultaneous dual- or multi-color lasing.

Abstract: Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

Abstract: The present disclosure describes the design, fabrication, and demonstration of a compact spectroscopic analysis system that utilizes a linear variable filter chip attached directly over an image sensor array, and an integrated broadband LED illuminator that supplies light from the edge of the system to provide a low vertical dimension. The instrument is capable of accurately measuring the optical absorption spectra of colored liquids or the scattered spectra from solid objects that are placed in the illumination pathway. Due to the small vertical thickness of the system, the low cost of its components, and the accuracy with which it renders spectra in comparison to conventional spectrometers, we envision potential incorporation of the system into mobile communication devices, such as smartphones and tablets, as a means for providing a dedicated sensor for health diagnostic, environmental monitoring, and general-purpose color sensing applications.

Abstract: Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

Abstract: Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

Abstract: Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.