Patents by Inventor John Michael Kern

John Michael Kern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12270748
    Abstract: An apparatus for measuring contamination on a critical surface of a part is provided. A vessel for mounting the part is provided. An inert gas source is in fluid connection with the vessel and adapted to provide an inert gas to the vessel. At least one diffuser receives the inert gas from the vessel, wherein the critical surface of the part is exposed to the inert gas when the part is mounted in the vessel. At least one analyzer is adapted to receive inert gas from the at least one diffuser and measures contaminants in the inert gas.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: April 8, 2025
    Assignee: Lam Research Corporation
    Inventors: Amir A. Yasseri, Girish M. Hundi, John Michael Kerns, Duane Outka, John Daugherty, Cliff La Croix
  • Patent number: 12249490
    Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: March 11, 2025
    Assignee: Lam Research Corporation
    Inventors: Lin Xu, Douglas Detert, John Daugherty, Pankaj Hazarika, Satish Srinivasan, Nash W. Anderson, John Michael Kerns, Robin Koshy, David Joseph Wetzel, Lei Liu, Eric A. Pape
  • Patent number: 10473697
    Abstract: There is provided a system for use with a fiber-optic current transducer. The system includes a processing unit configured to transduce a first light signal into a first electrical signal. The processing unit is further configured to transduce a second light signal into a second electrical signal. Furthermore, the processing unit is configured to remove offsets from the first electrical signal and the second electrical signal by forcing the first electrical signal and the second electrical signal to be on the same per unit basis.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: November 12, 2019
    Assignee: GENERAL ELECTRIC COMPANY
    Inventors: Daniel Robert Wallace, John Michael Kern, Richard Young, Brian Ross
  • Patent number: 9873940
    Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: January 23, 2018
    Assignee: Lam Research Corporation
    Inventors: Lin Xu, Hong Shih, Nash Anderson, Tom Stevenson, John Daugherty, John Michael Kerns, Robert Griffith O'Neill
  • Publication number: 20170040147
    Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.
    Type: Application
    Filed: August 9, 2016
    Publication date: February 9, 2017
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, John Michael Kerns, Yan Fang, Allan Ronne
  • Patent number: 9546432
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: January 17, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20160291064
    Abstract: There is provided a system for use with a fiber-optic current transducer. The system includes a processing unit configured to transduce a first light signal into a first electrical signal. The processing unit is further configured to transduce a second light signal into a second electrical signal. Furthermore, the processing unit is configured to remove offsets from the first electrical signal and the second electrical signal by forcing the first electrical signal and the second electrical signal to be on the same per unit basis.
    Type: Application
    Filed: April 1, 2015
    Publication date: October 6, 2016
    Applicant: General Electric Company
    Inventors: Daniel Robert Wallace, John Michael Kern, Richard Young, Brian Ross
  • Patent number: 9337002
    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 10, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: John Daugherty, Hong Shih, Lin Xu, Anthony Amadio, Robert G. O'Neill, Peter Holland, Sivakami Ramanathan, Tae Won Kim, Duane Outka, John Michael Kerns, Sonia Castillo
  • Patent number: 9123651
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: September 1, 2015
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20150184296
    Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.
    Type: Application
    Filed: December 16, 2014
    Publication date: July 2, 2015
    Inventors: Lin Xu, Hong Shih, Nash Anderson, Tom Stevenson, John Daugherty, John Michael Kerns, Robert Griffith O'Neill
  • Publication number: 20150187615
    Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.
    Type: Application
    Filed: December 22, 2014
    Publication date: July 2, 2015
    Inventors: John Daugherty, Hong Shih, Anthony Amadio, Tom Stevenson, Lin Xu, John Michael Kerns, Robert Griffith O'Neill, Sonia Castillo
  • Publication number: 20140315392
    Abstract: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component.
    Type: Application
    Filed: April 22, 2013
    Publication date: October 23, 2014
    Applicant: Lam Research Corporation
    Inventors: Lin Xu, Hong Shih, Anthony Amadio, Rajinder Dhindsa, John Michael Kerns, John Daugherty
  • Publication number: 20140295670
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Application
    Filed: March 27, 2013
    Publication date: October 2, 2014
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20140272459
    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 18, 2014
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John Daugherty, Hong Shih, Lin Xu, Anthony Amadio, Robert G. O'Neill, Peter Holland, Sivakami Ramanathan, Tae Won Kim, Duane Outka, John Michael Kerns, Sonia Castillo
  • Publication number: 20140113453
    Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.
    Type: Application
    Filed: October 24, 2012
    Publication date: April 24, 2014
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, Anthony Amadio, Duane Outka, Yan Fang, Allan Ronne, Robert G. O'Neil, Rajinder Dhindsa, Travis Taylor
  • Publication number: 20130105083
    Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.
    Type: Application
    Filed: November 1, 2011
    Publication date: May 2, 2013
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, John Michael Kerns, Yan Fang, Allan Ronne
  • Patent number: 8359124
    Abstract: A system for optimizing customer utility usage in a utility network of customer sites, each having one or more utility devices, where customer site is communicated between each of the customer sites and an optimization server having software for optimizing customer utility usage over one or more networks, including private and public networks. A customer site model for each of the customer sites is generated based upon the customer site information, and the customer utility usage is optimized based upon the customer site information and the customer site model. The optimization server can be hosted by an external source or within the customer site. In addition, the optimization processing can be partitioned between the customer site and an external source.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: January 22, 2013
    Assignee: General Electric Company
    Inventors: Zhi Zhou, Juan Manuel de Bedout, John Michael Kern, Emrah Biyik, Ramu Sharat Chandra
  • Publication number: 20110106327
    Abstract: A method for optimizing customer utility usage in a utility network of customer sites, each having one or more utility devices, where customer site information is communicated between each of the customer sites and an optimization server having software for optimizing customer utility usage over one or more networks, including private and public networks. A customer site model for each of the customer sites is generated based upon the customer site information, and the customer utility usage is optimized based upon the customer site information and the customer site model. The optimization server can be hosted by an external source or within the customer site. In addition, the optimization processing can be partitioned between the customer site and an external source.
    Type: Application
    Filed: December 17, 2009
    Publication date: May 5, 2011
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Zhi Zhou, Juan Manuel de Bedout, John Michael Kern, Emrah Biyik, Ramu Sharat Chandra
  • Publication number: 20110106328
    Abstract: A system for optimizing customer utility usage in a utility network of customer sites, each having one or more utility devices, where customer site is communicated between each of the customer sites and an optimization server having software for optimizing customer utility usage over one or more networks, including private and public networks. A customer site model for each of the customer sites is generated based upon the customer site information, and the customer utility usage is optimized based upon the customer site information and the customer site model. The optimization server can be hosted by an external source or within the customer site. In addition, the optimization processing can be partitioned between the customer site and an external source.
    Type: Application
    Filed: December 17, 2009
    Publication date: May 5, 2011
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Zhi Zhou, Juan Manuel de Bedout, John Michael Kern, Emrah Biyik, Ramu Sharat Chandra
  • Patent number: 7788898
    Abstract: A system for transferring mechanical torque variably between a plurality of rotating machines in a turbofan engine. Two devices are used, where the first device relies upon magnetic properties of a planetary magnetic gearbox to couple the magnetic machines. The second device is used to variably control the torque transfer between the magnetic machines. The system couples rotating shafts rotating at differing speeds within a turbofan engine for controllably transferring power. To transfer power in the system, a fixed gear ratio is obtained by coupling the relatively high- and low-speed engine shafts to an epicyclic magnetic gearbox.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: September 7, 2010
    Assignee: General Electric Company
    Inventors: John Michael Kern, Michael V. Drexel, Jeremy Daniel VanDam