Abstract: A semiconductor device with an interconnect layer having a plurality of layout regions of active interconnects and dummy fills for uniform planarization. In one embodiment, the device will have at least one interconnect layer with a plurality of layout regions overlying the semiconductor substrate. Each layout region will comprise an active interconnect feature region and a dummy fill feature region adjacent thereto for facilitating uniformity of planarization during manufacturing. Each dummy fill region in each layout region will have a different density with respect to other dummy fill regions in other layout regions, so that the combined density of the active interconnect feature region and the dummy fill feature region in a layout region will be substantially uniform with respect to a similar combined density in each of the other layout regions.

Abstract: A process for evaluating and correcting virtual integrated circuit designs includes a method and apparatus for determining a ratio of an amount of material, i.e. polysilicon or metal, in any given layer to an area of the layer. The ratio is then compared to a predetermined target ratio, which is based on a ratio of the total amount of the material to the entire area of the I-C design. The process then automatically inserts or deletes an amount of material from the layer as needed, using any of four methods. These methods include deletion, scaling, deletion and scaling or striping. The ratio for an erroneous layer is rechecked after the first correction is performed and the entire process is repeated using a Newton-Raphson or a Least Absolute Deviation Regression method until the ratio falls within the predetermined tolerances. If the layer has been filled, the layer is further checked for short circuits, fill isolation violations, antenna violations and the like which may have resulted from the material fill.

Abstract: A method for making a layout for an interconnect layer of a semiconductor device to facilitate uniformity of planarization during manufacture of the semiconductor device includes determining an active interconnect feature density for each of a plurality of layout regions of the interconnect layout. The method further includes adding dummy fill features to each layout region to obtain a desired density of active interconnect features and dummy fill features to facilitate uniformity of planarization during manufacturing of the semiconductor device. By adding dummy fill features to obtain a desired density of active interconnect features and dummy fill features, dummy fill features are not unnecessarily added, and each layout region has a uniform density.

Abstract: A method for making a layout for an interconnect layer of a semiconductor device to facilitate uniformity of planarization during manufacture of the semiconductor device includes determining an active interconnect feature density for each of a plurality of layout regions of the interconnect layout. The method further includes adding dummy fill features to each layout region to obtain a desire density of active interconnect features and dummy fill features to facilitate uniformity of planarization during manufacturing of the semiconductor device. By adding dummy fill features to obtain a desired density of active interconnect features and dummy fill features, dummy fill features are not unnecessarily added, and each layout region has a uniform density.