Abstract: An easily adjustable wafer retaining ring for both coarse and micro-adjustable engagement with a carrier head assembly of a chemical-mechanical polishing apparatus is disclosed. The carrier head supports the wafer on a wafer support surface during the polishing process. The wafer is held in place by a wafer retaining ring which has an inner and an outer set of threads around the inner and outer circumferences of the retaining ring. The carrier head has engagement means for engaging the retaining ring using the inner and outer threads of the retaining ring. The lower surface of the retaining ring has a groove, preferably, v-shaped which is in contact with the carrier head and parallel to the plane of rotational engagement of the retaining ring with the carrier head. A locking ring is receivably engageable with the groove of the retaining ring. A lock limits further vertical displacement of the retaining ring by bearing pressure down on the locking ring.

Abstract: A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtexture and micro-topology of the surface to produce a desired surface contour or planarity. This precise conditioning of the microscopic features of the polishing pad surface controls dishing in workpieces during polishing.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: A wafer carrier for polishing or planarizing semiconductor workpieces or wafers includes a pressure plate, an upper housing, and a lower housing. The pressure plate is configured to hold a wafer to be polished or planarized against a polishing pad, and further configured to rotate about the lower housing of the wafer carrier to rotate the wafer during the polishing or planarizing process. The wafer carrier includes an electric direct drive motor, with the stators of the motor disposed in the lower housing and the rotors of the motor disposed in the pressure plate, to rotate the pressure plate about the lower housing. Accordingly, when electric power is supplied to the stators of the direct drive motor, in response to the magnetic flux generated by the stators, the rotors of the motor rotate the pressure plate.

Abstract: A wafer carrier for polishing or planarizing semiconductor workpieces or wafers includes a pressure plate configured to hold a wafer to be polished or to be planarized against a polishing pad, and is further configured to rotate the wafer during the polishing or planarizing process. A retaining ring for holding the wafer is mounted about the periphery of the pressure plate. The retaining ring slides vertically and independently relative to the pressure plate. A polishing pad load ring is also slideably mounted about the periphery of the retaining ring. The pad load ring is biased against the polishing pad, and slides vertically and independently of the pressure plate and the wafer retaining ring. In operation, the wafer carrier is moved across the polishing pad, which is sufficiently compliant to cause wave deformation of the surface of the pad.

Abstract: A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: A carrier assembly for use in the processing of semiconductor wafers which avoids the use of a gimbal mechanism. The wafer carrier assembly comprises a backing pad for the wafer, with the wafer and backing pad secured within a retaining ring, such that the retaining ring, wafer, and backing pad move as single, integral assembly. A resiliently flexible outer housing terminates in a pad load ring transmits the rotation of the drive shaft to the load plate while allowing limited axial movement between the outer ring and inner ring assembly. The wafer/load plate assembly is permitted to float within the outer ring while the outer ring locally depresses the polishing pad near the wafer periphery, to mitigate edge exclusion.

Abstract: The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A one-piece cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station.