Abstract: A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.

Abstract: A method is described of injecting CO2 into an aquifer or a depleted hydrocarbon reservoir (211) via at least one injection well (202) that penetrates said aquifer or reservoir, wherein the injection well is provided with an injection tubing (203) that is in sealing engagement with the injection well. The injection tubing terminates at or immediately above the interval of the aquifer or the reservoir into which the CO2 is to be injected and the injection tubing is provided with a fluid injection control valve (208) at or near the bottom thereof which is closed or closes when the pressure above the valve is less than a pre-set pressure value and opens or reopens when the pressure above the valve is at or greater than said pre-set pressure value, the pre-set pressure value being selected such that the CO2 in the injection tubing is maintained in a liquid or supercritical state.

Abstract: An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.

Abstract: A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.

Abstract: A method is described of injecting CO2 into an aquifer or a depleted hydrocarbon reservoir (211) via at least one injection well (202) that penetrates said aquifer or reservoir, wherein the injection well is provided with an injection tubing (203) that is in sealing engagement with the injection well. The injection tubing terminates at or immediately above the interval of the aquifer or the reservoir into which the CO2 is to be injected and the injection tubing is provided with a fluid injection control valve (208) at or near the bottom thereof which is closed or closes when the pressure above the valve is less than a pre-set pressure value and opens or reopens when the pressure above the valve is at or greater than said pre-set pressure value, the pre-set pressure value being selected such that the CO2 in the injection tubing is maintained in a liquid or supercritical state.

Abstract: A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit.

Abstract: A semiconductor device comprises: a first transistor in a substrate; a second transistor in said substrate; and a further device in said substrate, wherein the second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage, wherein the first voltage is the (normal) voltage of operation of the first transistor, and wherein the first transistor is isolated from the second voltage.

Abstract: A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.

Abstract: An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.

Abstract: A bipolar transistor is formed on a heavily doped silicon substrate (1). An epitaxially grown collector (12) is formed on the substrate (1) and comprises silicon containing germanium at least at the top of the collector (12). An epitaxial base (13) is formed on the collector (12) to have the opposite polarity and also comprises silicon containing germanium at least at the bottom of the base (13). An emitter is formed at the top of the base (13) and comprises polysilicon doped to have the same polarity as the collector (12).

Abstract: An optical router comprises a substantially planar substrate, a stator fixed to and projecting from an upper surface of the substrate, and a rotor surrounding the stator so as to be rotatable about the stator. At least one optical guiding component is formed in or on the rotor. A substantially planar layer is provided on the substrate surrounding the rotor and has a plurality of optical waveguides formed therein, the waveguides opening at least one end onto a space surrounding the rotor. The stator rotor, and planar layer are formed on the substrate by a series of deposition and etching steps such that the rotor may be rotated about the stator so as to align the optical guiding component with one or more of the waveguide openings.

Abstract: An optical router comprises a substantially planar substrate, a stator fixed to and projecting from an upper surface of the substrate, and a rotor surrounding the stator so as to be rotatable about the stator. At least one optical guiding component is formed in or on the rotor. A substantially planar layer is provided on the substrate surrounding the rotor and has a plurality of optical waveguides formed therein, the waveguides opening at at least one end onto a space surrounding the rotor. The stator rotor, and planar layer are formed on the substrate by a series of deposition and etching steps such that the rotor may be rotated about the stator so as to align the optical guiding component with one or more of the waveguide openings.