Patents by Inventor John O'M. Bockris

John O'M. Bockris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5888452
    Abstract: Novel hydrogenated amorphous silicon alloys are disclosed. Hydrogenated amorphous silicon alloys produced by PECVD are disclosed. A method is also disclosed for the preparation of novel hydrogenated amorphous silicon alloys for use as thin films. The method comprises subjecting a mixed gas of gas-phase silicon compounds and other gas-phase alloy element compounds to plasma enhanced chemical vapor deposition in a reaction zone such that the alloy formed is deposited on a substrate.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: March 30, 1999
    Assignee: Electric Power Research Institute
    Inventors: Guang Hai Lin, John O'M. Bockris, Muzhi He, Mridula Kapur
  • Patent number: 5242505
    Abstract: Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.
    Type: Grant
    Filed: December 3, 1991
    Date of Patent: September 7, 1993
    Assignee: Electric Power Research Institute
    Inventors: Guang H. Lin, Mu Z. He, Mridula Kapur, John O'M. Bockris
  • Patent number: 4995952
    Abstract: Conditions have been found which make possible the continuous electrolysis of water using hydrogen sulfide. Contrary to the previous claims, it is not necessary to add a solvent for sulfur extraction. The invention avoids the difficulty of the passivation of the anode and the interruption of the current flow.
    Type: Grant
    Filed: April 30, 1987
    Date of Patent: February 26, 1991
    Inventors: Balasubramaniam Dandapani, John O'M. Bockris
  • Patent number: 4790916
    Abstract: A photo-activated semiconductor device is adapted to be exposed to light energy. Two physically separated electrocatalysts are placed in electrical contact with the photo-activated semiconductor device. An electrolytic solution physically separated from the semiconductor device is placed in electrical contact with both electrocatalysts. A method for supplying electrical energy to an anode and a cathode is an electrochemical reaction zone containing an electrolytic solution which comprises positioning a photo-activated semiconductor device having separate donor and acceptor regions external to an electrolytic solution. The doner region is electrically connected to a cathode and the acceptor region is electrically connected to the anode. A portion of the photo-activated semiconductor device is exposed to a source of radiation which is external to the reaction zone. The products derived from the electrolytic solution are collected for later use.
    Type: Grant
    Filed: August 18, 1987
    Date of Patent: December 13, 1988
    Assignee: The Texas A&M University System
    Inventors: Oliver J. Murphy, John O'M Bockris
  • Patent number: 4734168
    Abstract: The photoelectrolysis of water by solar radiation to produce hydrogen and oxygen is achieved using semiconductor electrodes. The cell comprises a p-silicon wafer treated with catalyst as photocathode and metal doped n-silicon wafer as photoanode. The cell is operated at a small bias potential.
    Type: Grant
    Filed: November 30, 1984
    Date of Patent: March 29, 1988
    Assignee: Texas A & M University
    Inventors: John O'M. Bockris, Marek Szklarczyk, Aliasgar Q. Contractor
  • Patent number: 4722776
    Abstract: A photo-activated semiconductor device is adapted to be exposed to light energy. Two physically separated electrocatalysts are placed in electrical contact with the photo-activated semiconductor device. An electrolytic solution physically separated from the semiconductor device is placed in electrical contact with both electrocatalysts. A method for supplying electrical energy to an anode and a cathode is an electrochemical reaction zone containing an electrolytic solution which comprises positioning a photo-activated semiconductor device having separate donor and acceptor regions external to an electrolytic solution. The donor region is electrically connected to a cathode and the acceptor region is electrically connected to the anode. A portion of the photo-activated semiconductor device is exposed to a source of radiation which is external to the reaction zone. The products derived from the electrolytic solution are collected for later use.
    Type: Grant
    Filed: March 14, 1984
    Date of Patent: February 2, 1988
    Assignee: The Texas A&M University System
    Inventors: Oliver J. Murphy, John O'M. Bockris
  • Patent number: 4497698
    Abstract: An improved Perovskite-type oxide for electrocatalytic oxygen evolution from alkaline electrolyte comprising lanthanum nickelate is disclosed, together with an improved co-precipitation process for producing the lanthanum nickelate powders from which the anode is formed.
    Type: Grant
    Filed: August 11, 1983
    Date of Patent: February 5, 1985
    Assignee: Texas A&M University
    Inventors: John O'M. Bockris, Takaaki Ottagawa