Abstract: An apparatus for the treatment of semi-conductor wafers is provided. The apparatus has a first valve mechanism for introducing different treatment fluids into a treatment tank from different reservoirs. At least one collection device is provided for collecting a treatment fluid after treatment of wafers therewith in the treatment tank. A second valve mechanism is provided for conveying at least a portion of the treatment fluid out of the collection device and to a respective reservoir. A rinsing mechanism is provided for rinsing the collection device.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: A method and apparatus for treating substrates in a fluid container with at least one fluid and ultrasound provided. Each of two oppositely disposed walls of the fluid container are provided with at least two ultrasound radiation areas that can be respectively individually activated. The ultrasound radiation areas of one of the container walls is activated in a chronological relationship to the ultrasound radiation areas of the other container wall in such a way that oppositely disposed ultrasound radiation areas of the container walls are not activated simultaneously.

Abstract: The aim of the invention is to reduce the chemical consumption in a method for treating substrates, especially semiconductor wafers, in a treatment vessel, into which different treatment fluids from respective containers are introduced in succession in order to treat the substrates. To this end, the invention provides that a treatment fluid is fed into a collection vessel after a treatment, at least one portion of the treatment fluid is withdrawn from the collection vessel and returned into the respective container, and the collection vessel is rinsed after the withdrawal of a treatment fluid and before receiving another treatment fluid. The invention also relates to a device for treating substrates, especially semiconductor wafers, in a treatment vessel.

Abstract: A device for the treatment of substrates (2) has a container having a bottom and being filled with a treatment fluid. The treatment fluid streams in from below through the bottom of the container. At least two inlet tubes are provided for the treatment fluid underneath the container bottom. Each of the at least two inlet tubes is provided with projecting comb-like distribution channels. The at least two inlet tubes and the distribution channels are arranged in a common plane. The distribution channels of one of the at least two inlet tubes are respectively positioned between two of the distribution channels of the other one of the two inlet tubes.

Abstract: A method for treating substrates in a container containing a treatment fluid includes the step of inserting the substrates into the empty container and introducing a first treatment fluid at the bottom of the container to fill the container. The first treatment fluid is displaced by introducing a second treatment fluid at the bottom of the container, wherein the first treatment fluid flows out of the container across the upper edge of the container.

Abstract: A device for the treatment of substrates has a container having walls and being filled with a treatment fluid. At least one substrate carrier is mounted in the container so as to move the substrates vertically in a reciprocating manner without a substrate support. Substrate side walls are provided between the substrates and the container walls. These substrate side walls extend parallel to the substrates and are vertically movable in a reciprocating manner with the substrates.

Abstract: A treatment apparatus for treating substrates includes a fluid container and a device for moving in a reciprocating manner the substrates within the fluid container during treatment to thereby make accessible areas of the substrates that would otherwise be obstructed by parts of the device.

Abstract: An apparatus for processing substrates is provided. The apparatus includes a receptacle for containing processing fluid, and at least one substrate support. Components of the receptacle and/or substrate support that come into contact with processing fluid have a protective layer. Guide or support members for the substrates are fused to the protective layer.

Abstract: A device for treating substrates includes a fluid container in which the substrates are contained during treatment. A nozzle system is connected to the sidewalls and/or bottom of the fluid container and includes a plurality of nozzles for introducing a fluid into the fluid container.

Abstract: A device for treating substrates includes a fluid container in which the substrates are contained during treatment. A nozzle system is connected to the sidewalls and/or bottom of the fluid container and includes a plurality of nozzles for introducing a fluid into the fluid container.