Abstract: One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion.

Abstract: An autonomous path treatment system and associated path treatment method uses a mobile path recording device having a locator, a processor and firmware to capture a sequence of coordinates and directions of travel of a path as the mobile device is moved along the path and generate a path program file. The system also has an autonomous path treatment robot having: a treatment mechanism for treating the path; a controller having a processor and memory storing firmware that when executed obeys steps of the path program file to control the motor and the treatment mechanism to treat the path; and a server configured to execute a path program to process the captured sequence of coordinates and directions into the path program file containing instructions for controlling the autonomous path treatment robot to treat the path based upon the coordinates.

Abstract: An autonomous path treatment system and associated path treatment method uses a mobile path recording device having a locator, a processor and firmware to capture a sequence of coordinates and directions of travel of a path as the mobile device is moved along the path and generate a path program file. The system also has an autonomous path treatment robot having: a treatment mechanism for treating the path; a controller having a processor and memory storing firmware that when executed obeys steps of the path program file to control the motor and the treatment mechanism to treat the path; and a server configured to execute a path program to process the captured sequence of coordinates and directions into the path program file containing instructions for controlling the autonomous path treatment robot to treat the path based upon the coordinates.

Abstract: An autonomous path treatment system and associated path treatment method uses a mobile path recording device having a locator, a processor and firmware to capture a sequence of coordinates and directions of travel of a path as the mobile device is moved along the path and generate a path program file. The system also has an autonomous path treatment robot having: a treatment mechanism for treating the path; a controller having a processor and memory storing firmware that when executed obeys steps of the path program file to control the motor and the treatment mechanism to treat the path; and a server configured to execute a path program to process the captured sequence of coordinates and directions into the path program file containing instructions for controlling the autonomous path treatment robot to treat the path based upon the coordinates.

Abstract: One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion.

Abstract: One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion.

Abstract: A method for generating a report by a computing device is described. The method includes identifying a specific health care intervention. The method also includes creating a health care cohort for the specific health care intervention. The health care cohort includes a definition of a primary intervention. The method further includes generating a report based on the health care cohort.

Abstract: An autonomous path treatment system and associated path treatment method uses a mobile path recording device having a locator, a processor and firmware to capture a sequence of coordinates and directions of travel of a path as the mobile device is moved along the path and generate a path program file. The system also has an autonomous path treatment robot having: a treatment mechanism for treating the path; a controller having a processor and memory storing firmware that when executed obeys steps of the path program file to control the motor and the treatment mechanism to treat the path; and a server configured to execute a path program to process the captured sequence of coordinates and directions into the path program file containing instructions for controlling the autonomous path treatment robot to treat the path based upon the coordinates.

Abstract: An autonomous path treatment system and associated path treatment method uses a mobile path recording device having a locator, a processor and firmware to capture a sequence of coordinates and directions of travel of a path as the mobile device is moved along the path and generate a path program file. The system also has an autonomous path treatment robot having: a treatment mechanism for treating the path; a controller having a processor and memory storing firmware that when executed obeys steps of the path program file to control the motor and the treatment mechanism to treat the path; and a server configured to execute a path program to process the captured sequence of coordinates and directions into the path program file containing instructions for controlling the autonomous path treatment robot to treat the path based upon the coordinates.

Abstract: Various devices, systems, and methods are capable of killing tumor cells by delivering cell-disrupting agents into a tumor in an inward direction from a peripheral border about the tumor. In some examples, a covering that includes one or more emissive elements encompasses at least a portion of a tumor such that the emissive element is directed inwardly toward the tumor so as to be able to introduce a cell-disrupting agent into the tumor. In further examples, the covering is incorporated into a glove.

Abstract: A method for generating a report by a computing device is described. The method includes identifying a specific health care intervention. The method also includes creating a health care cohort for the specific health care intervention. The health care cohort includes a definition of a primary intervention. The method further includes generating a report based on the health care cohort.

Abstract: Various devices, systems, and methods are capable of killing tumor cells by delivering cell-disrupting agents into a tumor in an inward direction from a peripheral border about the tumor. In some examples, a covering that includes one or more emissive elements encompasses at least a portion of a tumor such that the emissive element is directed inwardly toward the tumor so as to be able to introduce a cell-disrupting agent into the tumor. In further examples, the covering is incorporated into a glove.

Abstract: A positron emission scanner is disclosed having a timing compensation element which uses position information originating from a spatial locator element to compensate for travel time of timing signals. A method of constructing a PET image is also discussed in which a timing error function is convolved with an envelope function evaluated along a line of response to derive an emission event weight for use in image construction.

Abstract: A gamma ray detector is disclosed. A scintillation layer (60), for example of barium fluoride, is formed of a plurality of adjacent elongate rods, each rod being elongate within the plane of the layer, and being provided with a plurality of slots (62) distributed along the length of the rod and extending in a width direction also coplanar with the layer. Behind the scintillation layer a sensor determines a position of uv photons exiting the layer.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.

Abstract: A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon <1020 cm?3, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C.

Abstract: A method and structure in which Ge-based semiconductor devices such as FETs and MOS capacitors can be obtained are provided. Specifically, the present invention provides a method of forming a semiconductor device including a stack including a dielectric layer and a conductive material located on and/or within a Ge-containing material (layer or wafer) in which the surface thereof is non-oxygen chalcogen rich. By providing a non-oxygen chalcogen rich interface, the formation of undesirable interfacial compounds during and after dielectric growth is suppressed and interfacial traps are reduced in density.

Abstract: There is disclosed a device for imaging radionuclide emissions comprising: a charge coupled device or CMOS active pixel sensor device; and a scintillator layer in direct contact with the charge coupled device or CMOS active pixel sensor device; in which the thickness of the scintillator layer is greater than 200 ?m, preferably greater than 400 ?m, most preferably about 500 ?m.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.

Abstract: The present invention provides a method for removing or reducing the thickness of ultrathin interfacial oxides remaining at Si—Si interfaces after silicon wafer bonding. In particular, the invention provides a method for removing ultrathin interfacial oxides remaining after hydrophilic Si—Si wafer bonding to create bonded Si—Si interfaces having properties comparable to those achieved with hydrophobic bonding. Interfacial oxide layers of order of about 2 to about 3 nm are dissolved away by high temperature annealing, for example, an anneal at 1300°-1330° C. for 1-5 hours. The inventive method is used to best advantage when the Si surfaces at the bonded interface have different surface orientations, for example, when a Si surface having a (100) orientation is bonded to a Si surface having a (110) orientation. In a more general aspect of the invention, the similar annealing processes may be used to remove undesired material disposed at a bonded interface of two silicon-containing semiconductor materials.