Abstract: A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Abstract: A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Abstract: A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Abstract: An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.

Abstract: An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.

Abstract: An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.

Abstract: An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.

Abstract: An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.