Patents by Inventor John P. David

John P. David has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IMPACT IONIZATION DEVICES UNDER DYNAMIC ELECTRIC FIELDS
    Publication number: 20160254867
    Abstract: Apparatus, systems, and methods relate to use of a time-varying bias for application to an avalanche photodiode. Embodiments include systems and methods of determining an appropriate time-varying bias for application to an avalanche photodiode in linear mode. Avalanche photodiode having appropriate parameters may also be determined. Additional apparatus, systems, and methods are disclosed.
    Type: Application
    Filed: May 6, 2016
    Publication date: September 1, 2016
    Inventors: Majeed M. Hayat, John P. David, Sanjay Krishna, Luke F. Lester, David A. Ramirez, Payman Zarkesh-Ha
  • Impact ionization devices under dynamic electric fields
    Patent number: 9354113
    Abstract: Apparatus, systems, and methods relate to use of a time-varying bias for application to an avalanche photodiode. Embodiments include systems and methods of determining an appropriate time-varying bias for application to an avalanche photodiode in linear mode. Avalanche photodiode having appropriate parameters may also be determined. Additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: May 31, 2016
    Assignees: STC.UNM, The University of Sheffield
    Inventors: Majeed M. Hayat, John P. David, Sanjay Krishna, Luke F. Lester, David A. Ramirez, Payman Zarkesh-Ha
  • INTERSUBBAND DETECTOR WITH AVALANCHE MULTIPLIER REGION
    Publication number: 20080006816
    Abstract: A photodetector for use at wavelengths of 2 ?m and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 ?m, integrated with an avalanche multiplier region to provide low-rise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).
    Type: Application
    Filed: July 20, 2007
    Publication date: January 10, 2008
    Inventors: Sanjay Krishna, John P. David, Majeed Hayat