Patents by Inventor John P. McCarten
John P. McCarten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967018Abstract: Rendering an avatar in a selected environment may include determining as inputs into an inferred shading network, an expression geometry to be represented by an avatar, head pose, and camera angle, along with a lighting representation for the selected environment. The inferred shading network may then generate a texture of a face to be utilized in rendering the avatar. The lighting representation may be obtained as lighting latent variables which are obtained from an environment autoencoder trained on environment images with various lighting conditions.Type: GrantFiled: December 21, 2020Date of Patent: April 23, 2024Assignee: Apple Inc.Inventors: Andrew P. Mason, Olivier Soares, Haarm-Pieter Duiker, John S. McCarten
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Publication number: 20230134194Abstract: A time centering module cooperates with an image sensor that is configured to capture two or more image captures at least one of 1) several different lengths of exposures of a same subject matter, 2) several different integration times for that same subject matter, and 3) any combination of these, that are to be merged into a High Dynamic Range (HDR) image capture. The time centering module is also configured to cooperate with data storage components. The time centering module correlates image data of a moving object from the two or more image captures stored in the data storage component. The image captures each have different integration times in a rolling shutter or different lengths of exposures in a global shutter in order to correlate the image data of the moving object in image captures by a midpoint in time of their respective image capture.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: John P McCarten, Namwoong Paik
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Publication number: 20210193715Abstract: A FinFET pixel architecture for an image sensor is disclosed. Specific implementations of a pixel of an image sensor may include a photodiode region coupled with a transfer region coupled with one or more fin field-effect transistors (FinFETs). The one or more FinFETs may be one of a transfer transistor, a storage gate, a reset transistor, a source follower transistor, a row select transistor, or an anti-blooming gate.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: John P. McCARTEN
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Publication number: 20210152770Abstract: An imaging system may include an array of image sensor pixels, each image sensor pixel including a photosensitive element coupled to time trace generation circuitry having a first CCD register. The time trace generation circuitry may be coupled to integration circuitry having a second integration CCD register via corresponding charge transfer structures. The second integration CCD register may integrate multiples sets of sampled charge from the first CCD register to improve the signal-to-noise ratio of the collected time trace information. The time trace generations circuitry or integration circuitry may also include background light subtract capabilities to remove background light level from the collected time trace information.Type: ApplicationFiled: November 18, 2019Publication date: May 20, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Manuel H. INNOCENT, Christopher PARKS, John P. MCCARTEN
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Patent number: 10469775Abstract: Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.Type: GrantFiled: March 31, 2017Date of Patent: November 5, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: John P. McCarten, Hung Q. Doan, Robert Kaser
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Publication number: 20180288343Abstract: Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: John P. McCARTEN, Hung Q. DOAN, Robert KASER
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Patent number: 9070611Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: GrantFiled: July 29, 2011Date of Patent: June 30, 2015Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: John P. McCarten, Robert Michael Guidash
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Patent number: 8987788Abstract: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.Type: GrantFiled: September 20, 2012Date of Patent: March 24, 2015Assignee: Semiconductor Components Industries, LLCInventor: John P. McCarten
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Patent number: 8946612Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: GrantFiled: July 29, 2011Date of Patent: February 3, 2015Assignee: Semiconductor Components Industries, LLCInventors: John P. McCarten, Robert Michael Guidash
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Patent number: 8829637Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: GrantFiled: July 29, 2011Date of Patent: September 9, 2014Assignee: Semiconductor Components Industries, LLCInventors: John P. McCarten, Robert Michael Guidash
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Patent number: 8760543Abstract: In various embodiments, image sensors include an imaging array of optically active pixels, a dark-reference region of optically inactive pixels, and two light shields disposed over the dark-reference region and having openings therein.Type: GrantFiled: August 30, 2012Date of Patent: June 24, 2014Assignee: Truesense Imaging, Inc.Inventors: John P. McCarten, Eric J. Meisenzahl
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Patent number: 8748946Abstract: An electrical component includes a semiconductor layer having a first conductivity type and a interconnect layer disposed adjacent to a frontside of the semiconductor layer. At least one bond pad is disposed in the interconnect layer and formed adjacent to the frontside of the semiconductor layer. An opening formed from the backside of the semiconductor layer and through the semiconductor layer exposes at least a portion of the bond pad. A first region having a second conductivity type extends from the backside of the semiconductor layer to the frontside of the semiconductor layer and surrounds the opening. The first region can abut a perimeter of the opening or alternatively, a second region having the first conductivity type can be disposed between the first region and a perimeter of the opening.Type: GrantFiled: April 29, 2010Date of Patent: June 10, 2014Assignee: Omnivision Technologies, Inc.Inventors: John P. McCarten, Cristian A. Tivarus
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Patent number: 8736728Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: GrantFiled: July 29, 2011Date of Patent: May 27, 2014Assignee: Truesense Imaging, Inc.Inventors: John P. McCarten, Robert Michael Guidash
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Patent number: 8730362Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: GrantFiled: July 29, 2011Date of Patent: May 20, 2014Assignee: Truesense Imaging, Inc.Inventors: John P. McCarten, Robert Michael Guidash
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Patent number: 8618458Abstract: A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.Type: GrantFiled: November 7, 2008Date of Patent: December 31, 2013Assignee: OmniVision Technologies, Inc.Inventors: John P. McCarten, Joseph R. Summa, Cristian A. Tivarus, Todd J. Anderson, Eric G. Stevens
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Patent number: 8471939Abstract: An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.Type: GrantFiled: August 1, 2008Date of Patent: June 25, 2013Assignee: OmniVision Technologies, Inc.Inventors: Cristian A. Tivarus, John P. McCarten, Joseph R. Summa
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Publication number: 20130075792Abstract: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.Type: ApplicationFiled: September 20, 2012Publication date: March 28, 2013Inventor: John P. McCarten
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Publication number: 20130076954Abstract: In various embodiments, image sensors include an imaging array of optically active pixels, a dark-reference region of optically inactive pixels, and two light shields disposed over the dark-reference region and having openings therein.Type: ApplicationFiled: August 30, 2012Publication date: March 28, 2013Inventors: John P. McCarten, Eric J. Meisenzahl
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Patent number: 8400537Abstract: An image sensor includes an array of pixels comprising a plurality of kernels that repeat periodically and each kernel includes n photosensitive regions for collecting charge in response to light, n is equal to or greater than 2; and a transparent layer spanning the photosensitive regions having n optical paths, at least two of which are different, wherein each optical path directs light of a predetermined spectral band into specific photosensitive regions.Type: GrantFiled: November 13, 2008Date of Patent: March 19, 2013Assignee: OmniVision Technologies, Inc.Inventors: John P. McCarten, Joseph R. Summa
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Publication number: 20130026548Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.Type: ApplicationFiled: July 29, 2011Publication date: January 31, 2013Inventors: John P. McCarten, Robert Michael Guidash