Patents by Inventor John P. McCarten

John P. McCarten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180288343
    Abstract: Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.
    Type: Application
    Filed: March 31, 2017
    Publication date: October 4, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: John P. McCARTEN, Hung Q. DOAN, Robert KASER
  • Patent number: 9070611
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: June 30, 2015
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8987788
    Abstract: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: March 24, 2015
    Assignee: Semiconductor Components Industries, LLC
    Inventor: John P. McCarten
  • Patent number: 8946612
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: February 3, 2015
    Assignee: Semiconductor Components Industries, LLC
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8829637
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8760543
    Abstract: In various embodiments, image sensors include an imaging array of optically active pixels, a dark-reference region of optically inactive pixels, and two light shields disposed over the dark-reference region and having openings therein.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: June 24, 2014
    Assignee: Truesense Imaging, Inc.
    Inventors: John P. McCarten, Eric J. Meisenzahl
  • Patent number: 8748946
    Abstract: An electrical component includes a semiconductor layer having a first conductivity type and a interconnect layer disposed adjacent to a frontside of the semiconductor layer. At least one bond pad is disposed in the interconnect layer and formed adjacent to the frontside of the semiconductor layer. An opening formed from the backside of the semiconductor layer and through the semiconductor layer exposes at least a portion of the bond pad. A first region having a second conductivity type extends from the backside of the semiconductor layer to the frontside of the semiconductor layer and surrounds the opening. The first region can abut a perimeter of the opening or alternatively, a second region having the first conductivity type can be disposed between the first region and a perimeter of the opening.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: June 10, 2014
    Assignee: Omnivision Technologies, Inc.
    Inventors: John P. McCarten, Cristian A. Tivarus
  • Patent number: 8736728
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: May 27, 2014
    Assignee: Truesense Imaging, Inc.
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8730362
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: May 20, 2014
    Assignee: Truesense Imaging, Inc.
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8618458
    Abstract: A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: December 31, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa, Cristian A. Tivarus, Todd J. Anderson, Eric G. Stevens
  • Patent number: 8471939
    Abstract: An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: June 25, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cristian A. Tivarus, John P. McCarten, Joseph R. Summa
  • Publication number: 20130075792
    Abstract: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.
    Type: Application
    Filed: September 20, 2012
    Publication date: March 28, 2013
    Inventor: John P. McCarten
  • Publication number: 20130076954
    Abstract: In various embodiments, image sensors include an imaging array of optically active pixels, a dark-reference region of optically inactive pixels, and two light shields disposed over the dark-reference region and having openings therein.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 28, 2013
    Inventors: John P. McCarten, Eric J. Meisenzahl
  • Patent number: 8400537
    Abstract: An image sensor includes an array of pixels comprising a plurality of kernels that repeat periodically and each kernel includes n photosensitive regions for collecting charge in response to light, n is equal to or greater than 2; and a transparent layer spanning the photosensitive regions having n optical paths, at least two of which are different, wherein each optical path directs light of a predetermined spectral band into specific photosensitive regions.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: March 19, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa
  • Publication number: 20130026548
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: John P. McCarten, Robert Michael Guidash
  • Publication number: 20130026594
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: John P. McCarten, Robert Michael Guidash
  • Publication number: 20130027597
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: John P. McCarten, Robert Michael Guidash
  • Publication number: 20130026342
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: John P. McCarten, Robert Michael Guidash
  • Publication number: 20130027598
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: John P. McCarten, Robert Michael Guidash
  • Patent number: 8339494
    Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: December 25, 2012
    Assignee: Truesense Imaging, Inc.
    Inventors: John P. McCarten, Robert Michael Guidash