Abstract: In various embodiments, dead space and associated coupling losses are reduced in energy storage and recovery systems employing compressed air.

Abstract: A method of assembling at least a first integrated circuit and a second integrated circuit into a multi chip module. The first integrated circuit is attached and electrically connected to a first substrate to form a first assembly, which is tested to ensure that it functions properly. The second integrated circuit is attached and electrically connected to a second substrate to form a second assembly, which is also tested to ensure that it functions properly. The first assembly is attached and electrically connected to the second assembly to form the multi chip module.

Abstract: An integrated circuit having electrically conductive vias with a diameter of between about one micron and about fifty microns. Prior art vias have a diameter of between no less than 0.3 microns to no more than 0.8 microns. In this manner, stresses such as those that press down upon the top surface of the integrated circuit can be absorbed by the large vias and transferred past fragile layers, such as low k layers, so that the fragile layers are not damaged by the stresses.

Abstract: A method of forming an electrical contact on a surface of a substrate. A first layer of a first electrically conductive material is formed on the surface of the substrate, where the first layer is formed in a substantially contiguous sheet across the surface of the substrate. A non electrically conductive masking layer is applied to the first layer, where the masking layer leaves exposed first portions of the first layer and covers second portions of the first layer. The substrate is immersed in a first electrolytic plating bath, and a first electrical potential is applied between the first layer and the first electrolytic plating bath, thereby causing the formation of a second layer of a second electrically conductive material on the exposed first portions of the first layer.

Abstract: An integrated circuit having electrically conductive vias with a diameter of between about one micron and about fifty microns. Prior art vias have a diameter of between no less than 0.3 microns to no more than 0.8 microns. In this manner, stresses such as those that press down upon the top surface of the integrated circuit can be absorbed by the large vias and transferred past fragile layers, such as low k layers, so that the fragile layers are not damaged by the stresses.

Abstract: A method of assembling at least a first integrated circuit and a second integrated circuit into a multi chip module. The first integrated circuit is attached and electrically connected to a first substrate to form a first assembly, which is tested to ensure that it functions properly. The second integrated circuit is attached and electrically connected to a second substrate to form a second assembly, which is also tested to ensure that it functions properly. The first assembly is attached and electrically connected to the second assembly to form the multi chip module.

Abstract: A method for providing under bump metallization on a substrate. Trenches are formed in the substrate, and a layer of first electrically conductive material is formed over the substrate. The layer of the first electrically conductive material substantially fills the trenches and substantially covers the substrate between the trenches in a contiguous sheet. The layer of the first electrically conductive material is thinned to an end point where the layer of the first electrically conductive material is substantially reduced in thickness, but still forms the contiguous sheet between the trenches. A layer of photoresist is applied over the layer of the first electrically conductive material to define openings. A second electrically conductive material is deposited into the openings. The photoresist layer is removed, and the layer of the first electrically conductive material in the contiguous sheet between the trenches is removed to isolate the first electrically conductive material in the trenches.

Abstract: A method of forming an electrical contact on a surface of a substrate. A first layer of a first electrically conductive material is formed on the surface of the substrate, where the first layer is formed in a substantially contiguous sheet across the surface of the substrate. A non electrically conductive masking layer is applied to the first layer, where the masking layer leaves exposed first portions of the first layer and covers second portions of the first layer. The substrate is immersed in a first electrolytic plating bath, and a first electrical potential is applied between the first layer and the first electrolytic plating bath, thereby causing the formation of a second layer of a second electrically conductive material on the exposed first portions of the first layer.

Abstract: Provided is a vertically integrated (“chip-over-chip”) semiconductor package and packaging method. The invention provides higher packaging density and performance, including increased functionality, decreased signal propagation delays, improved circuit switching speed, lower thermal resistance and higher thermal dissipation measurements, relative to previous package designs. According to the invention, a semiconductor package may be composed of a flip chip (or chips) overlying one or more other flip chips, all electrically bonded to flip chip bond pads on a cavity-less semiconductor substrate. The upper and lower flips chips may be assembled in a variety of different configurations and may be thermally or electrically connected to each other. In a preferred embodiment, the flip chips, particularly the lower flip chip(s), are thinned so that the overall package height is within conventional ranges for traditional single chip packages.

Abstract: Provided is a vertically integrated (“chip-over-chip”) semiconductor package and packaging method. The invention provides higher packaging density and performance, including increased functionality, decreased signal propagation delays, improved circuit switching speed, lower thermal resistance and higher thermal dissipation measurements, relative to previous package designs. According to the invention, a semiconductor package may be composed of a flip chip (or chips) overlying one or more other flip chips, all electrically bonded to flip chip bond pads on a cavity-less semiconductor substrate. The upper and lower flips chips may be assembled in a variety of different configurations and may be thermally or electrically connected to each other. In a preferred embodiment, the flip chips, particularly the lower flip chip(s), are thinned so that the overall package height is within conventional ranges for traditional single chip packages.

Abstract: Provided is a two-step, dual-thickness solder mask material on the substrate surface. The material is preferably applied in a series of screenings: A first screening of the solder mask material in the region where the chip will be placed, and a second screening of solder mask surrounding the place on the substrate surface where the die will be placed, normally over the outside edge regions of the substrate surface. The thickness of this first screening of solder mask may be from about 10 to 20 microns, while the thickness of the second screening of solder mask is about conventional thickness for a solder mask, for example from about 30 to 40 microns.

Abstract: Provided is a die clip for use in semiconductor flip chip packaging as a replacement for the conventional combination of a heat spreader and stiffener, a packaging method using the die clip, and a semiconductor package incorporating the die clip. In a preferred embodiment, the die clip is a piece of high modulus, high thermal conductivity material shaped to attach over a die on the surface of a packaging substrate. The die clip closely engages the die while leaving some space open around the perimeter to provide access to the die. An underfill material may then be dispensed into the gap between the die and the substrate through an opening in the die clip. The underfill material is then cured, the die clip providing a heat sink and keeping the die and substrate flat and immobile during and after the curing process. A BGA process may then be used to apply solder balls to the underside of the substrate for subsequent bonding of the package to a circuit board for use.

Abstract: Provided is a multi-piece integrated heat spreader/stiffener assembly which is bonded to the substrate and die in a semiconductor package following electrical bonding of the die to the substrate, a packaging method using the integrated heat spreader/stiffener, and a semiconductor package incorporating the integrated heat spreader/stiffener. In a preferred embodiment, the integrated heat spreader/stiffener assembly has two pieces, both composed of a high modulus, high thermal conductivity material shaped to attach to each other and a die on the surface of a packaging substrate. A first piece of this assembly is bonded to the substrate surface adjacent to an electrically connected die and to the top surface of the die prior to the dispensation and curing of underfill material which provides the mechanical connection between the die and the substrate. With the first piece of the assembly in place, access may still be had to at least one edge of the die to dispense and cure the underfill epoxy.

Abstract: Provided is a single-piece integrated heat spreader/stiffener which is bonded to the substrate and die in a semiconductor package following electrical bonding of the die to the substrate, a packaging method using the integrated heat spreader/stiffener, and a semiconductor package incorporating the integrated heat spreader/stiffener. In a preferred embodiment, the integrated heat spreader/stiffener is a piece of high modulus, high thermal conductivity material shaped to attach over a die on the surface of a packaging substrate. The heat spreader/stiffener is equipped with a plurality of apertures to provide access to the top surface of the die for adhesive to bond the heat spreader/stiffener to the die, and to its perimeter to provide access for dispensation of underfill material between the die and the substrate. Once the adhesive and underfill materials are in place, the adhesive and underfill resins are cured by heating.

Abstract: A method of packaging an integrated circuit. An integrated circuit is connected to a substrate. A reservoir body is applied to the substrate, and the reservoir body and substrate define at least one reservoir and at least one flow gate. The reservoir body, substrate, and integrated circuit define a flow ring which extends at least partially around the circumference of the integrated circuit. A compound is dispensed into the reservoirs, and is flowed through the flow gates and into the flow ring, underfilling the integrated circuit.

Abstract: A tensiometer having a vacuum gauge which is connected to a sensing unit including a ceramic cup, which is located remote from said gauge, by a conductor in the form of a capillary tube. A second capillary bleeder tube communicates with and leads from the ceramic cup and has a second end which is located below the level of the other end of the conducting tube, so that when said second end of the bleeder tube is exposed, the escape of air therefrom can be visually determined, during purging of the device, so that after all air has been removed from the tubes, the tensiometer can be sealed.