Abstract: A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material.The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.

Abstract: Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.

Abstract: There is described a unique mask and method of making same. The mask is especially useful in high resolution fabrication techniques such as in making magnetic bubble domain structures, semiconductor device structures and the like. The mask includes a suitable support of appropriate density to be substantially transparent to various types of radiation such as, but not limited to, E-beams, X-rays and the like. A layer of material which is substantially opaque to the same radiation and which can have the solubility thereof changed by application of E-beams or the like is provided on the support material. The mask is exposed to the solubility changing radiation wherein a pattern is defined in the layer, the layer is etched in a non-critical etch so that the soluble portion thereof is removed and the remaining material provides a suitable pattern. To the extent necessary, a suitable auxiliary support member can be provided to the support.

Abstract: There is provided a technique and apparatus for aligning a mask to a substrate with high precision using Moire fringe effects produced by superimposing diffraction gratings. The gratings comprise first and second patterns of horizontal and vertical lines and spaces, respectively. The first pattern comprises horizontal and vertical lines and spaces of a first width. The second pattern comprises horizontal and vertical lines of a second width which differs from the lines in the first pattern by a small amount .DELTA.. The patterns are superimposed to provide a Moire fringe effect. When alignment occurs, a symmetrical pattern is provided. If misalignment in the X, Y or .theta. coordinate occurs, an assymmetrical or skewed pattern of Moire fringe effects is generated.

Abstract: An actinic radiation emissive mask for a high resolution lithography emits actinic radiation which originates within the mask. The mask patterns the actinic radiation to expose resist in accordance with a desired pattern. The actinic radiation originating in the mask may be produced by radioactivity, stimulated emission or combinations thereof.