Patents by Inventor John P. Schuster

John P. Schuster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer-level sealed microdevice having trench isolation and methods for making the same
    Patent number: 7378294
    Abstract: A microdevice (20) having a hermetically sealed cavity (22) to house a microstructure (26). The microdevice (20) comprises a substrate (30), a cap (40), an isolation layer (70), at least one conductive island (60), and an isolation trench (50). The substrate (30) has a top side (32) with a plurality of conductive traces (36) formed thereon. The conductive traces (36) provide electrical connection to the microstructure (26). The cap (40) has a base portion (42) and a sidewall (44). The sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: May 27, 2008
    Assignee: Temic Automotive of North America, Inc.
    Inventors: Xiaoyi Ding, John P. Schuster
  • Hermetically sealed microdevice with getter shield
    Patent number: 7204737
    Abstract: A microdevice that comprises a device microstructure (38) and vent channel (34) in a wafer (14) that is sandwiched between a substrate (10) and a cap (16). The cap (16) and substrate (10) have recesses (41, 21) around the microstructure (22) to define a cavity. A vent (25) is connected to the vent channel (34) and subsequently to the cavity. The vent (25) is used to evacuate and seal the microstructure (38) in the cavity. A getter layer (32) can be used to maintain the cavity vacuum. An electrical connection can be provided through the vent (25), vent channel (34) and cavity to the getter (32) to electrically ground the getter layer (32).
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: April 17, 2007
    Assignee: Temic Automotive of North America, Inc.
    Inventors: Xiaoyi Ding, Jeffrey J. Frye, John P. Schuster
  • Wafer-level sealed microdevice having trench isolation and methods for making the same
    Patent number: 7045868
    Abstract: A microdevice (20) having a hermetically sealed cavity (22) to house a microstructure (26). The microdevice (20) comprises a substrate (30), a cap (40), an isolation layer (70), at least one conductive island (60), and an isolation trench (50). The substrate (30) has a top side (32) with a plurality of conductive traces (36) formed thereon. The conductive traces (36) provide electrical connection to the microstructure (26). The cap (40) has a base portion (42) and a sidewall (44). The sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material.
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: May 16, 2006
    Assignee: Motorola, Inc.
    Inventors: Xiaoyi Ding, John P. Schuster