Abstract: A microscale gas breakdown device includes a first surface and a second surface. The first surface and the second surface define a gap distance. The device includes a perturbation on the first surface or the second surface. The perturbation is defined by a height value and a radius value. The device includes a current source or a voltage source configured to apply a current or a voltage across the first surface and the second surface. In response to the current or the voltage being applied, a resulting discharge travels along a first discharge path in response to being exposed to a high pressure and a second discharge path in response to being exposed to a low pressure.

Abstract: A microscale gas breakdown device includes a first surface and a second surface. The first surface and the second surface define a gap distance. The device includes a perturbation on the first surface or the second surface. The perturbation is defined by a height value and a radius value. The device includes a current source or a voltage source configured to apply a current or a voltage across the first surface and the second surface. In response to the current or the voltage being applied, a resulting discharge travels along a first discharge path in response to being exposed to a high pressure and a second discharge path in response to being exposed to a low pressure.

Abstract: A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.

Abstract: A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.