Abstract: A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.

Abstract: A wafer with a buried V-groove cavity, and a method for fabricating V-grooves. In some embodiments, the method includes bonding a first layer, to a top surface of a substrate, to form a composite wafer, the first layer being composed of a first semiconductor material, the substrate being composed of a second semiconductor material, the top surface of the substrate having a cavity, the cavity including a V-groove.

Abstract: A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and

Abstract: A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.

Abstract: A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and a

Abstract: A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and a

Abstract: A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and a

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: An optical sensor (10) comprises an optical cavity defined by a dielectric body and responsive to one or more physical environmental conditions, and a waveguide (70) having a terminal end spaced apart from the optical cavity such that light is optically coupled from the terminal end of the waveguide (70) to the optical cavity. The waveguide (70) is arranged such that, in use, it is maintained at a first temperature that would not damage the optical coupling to the optical cavity when the dielectric body is maintained at a second temperature sufficient to damage the optical coupling to the optical cavity.

Abstract: A method of fabricating an integrated device on a chip comprising first and second features (A, B), the second feature, B, having greater dimension and/or being of coarser design than the first feature A. The method involves the steps of: depositing a resist onto the chip, the resist being of a type that forms a thinner deposit on larger or coarser features than on smaller or finer features; treating the resist in dependence upon the thickness thereof to render it susceptible to a subsequent etching step, the thicker areas of resist being treated for a longer period of time or by a more intense treatment than the thinner areas of resist; and etching the treated areas of the resist to form a mask for use in the fabrication of said first and second features (A, B), on the chip.

Abstract: A method of producing an optical grating component including only a single continuous grating field formed in a longitudinal waveguide rib, the method including the steps of defining a grating in an optic chip including a portion thereof through which the longitudinal waveguide rib is to extend, and then defining the lateral edges of the longitudinal rib in the optic chip, whereby any portion of the grating extending laterally beyond the lateral width of the rib is removed in the step of defining the lateral edges of the rib leaving a single continuous grating field that has straight lateral grating boundaries that are laterally aligned with the straight lateral edges of the rib.

Abstract: An arrangement of an integrated optical waveguide (1) relative to a V-groove (2) for receiving an optical fibre (5) which is to be optically coupled with an end of the waveguide (1) is described. A waveguide (1) is formed in a crystalline optical substrate (3), and a V-groove (2) formed therein beneath an elongate parallel sided window in the substrate with a centre line (2A) of the V-groove (2) aligned with an end (1A) of the waveguide (1). The parallel sides (2B, 2C) of the window at the end of the V-groove (2) aligned with the waveguide (1) terminate out of alignment with each other in a direction along the length of the V-groove whereby the V-groove undercuts a portion (3A) of the optically conducting layer (3) beneath said end of the waveguide (1). The end of the waveguide (1) therefore overhangs the end of the V-groove (2) to enable the end of an optical fibre (5) to be located in close proximity thereto.

Abstract: A rib waveguide structure comprising a layer (4) of light conductive material defined between two planar faces with a rib (9) formed on one of the faces and an optical component e.g. a tapered waveguide (6) optically coupled to the other face. An inverted rib waveguide comprising a light conductive layer (11) and a rib (10) that projects from the light conductive layer (11) into a substrate (4,8) is also described as well as other optical devices comprising a light conductive layer separated from a substrate by a non-planar layer (3) of light confining material and optical devices comprising two or more layers (2, 3; 18, 19, 20) of light confining material buried within a rib with a light conducting component (10; 17; 22) at least a part of which is formed between planes defined by the two layers of light confining material. A method of forming such devices is also described.

Abstract: A method of fabricating an integrated optical component on a silicon-on insulator chip comprising a silicon layer (1) separated from a substrate (2) by an insulating layer (3), the component having a first set of features, eg a rib waveguide (5) at a first level in the silicon layer (1) adjacent the insulating layer (3) and a second set of features, eg a triangular section (5B) at a second level in the silicon layer (1) further from the insulating layer (3), the method comprising the steps of: selecting a silicon-on-insulator chip having a silicon layer (1) of sufficient thickness for the first set of features; fabricating the first set of features in the silicon layer (1) at a first level in the silicon layer; increasing the thickness of the silicon layer (1) in selected areas to form a second level of the silicon layer (1) over part of the first level; and then fabricating the second set of features at the second level in the silicon layer (1).

Abstract: A method of forming an integrated chip optical device as a protective layer formed over part of the face of the chip on which at least one optical waveguide is formed, and the protective coating is selectively removed leaving the coating over an edge region 18 and the edge of the device is polished to provide high edge quality against which offchip optical fibers may be abutted.

Abstract: A rib waveguide structure comprising a layer (4) of light conductive material defined between two planar faces with a rib (9) formed on one of the faces and an optical components e.g. a tapered waveguide (6) optically coupled to the other face. An inverted rib waveguide comprising a light conductive layer (11) and a rib (10) that projects from the light conductive layer (11) into a substrate (4, 8) is also described as well as other optical devices comprising a light conductive layer separated from a substrate by a non-planar layer (3) of light confining material and optical devices comprising two or more layers (2, 3; 18, 19, 20) of light confining material buried within a rib with a light conducting component (10; 17; 22) at least a part of which is formed between planes defined by the two layers of light confining material. A method of forming such devices is also described.