Abstract: A method of registering terminals on an interdigitated chip capacitor (“IDC”) with a plurality of contact pads on a substrate. At least one vertically extending nonconductive abutment surface is formed between adjacent ones of the contact pads. A plurality of grooves projecting outwardly from said a central recess is formed on the substrate top portion. At least one sidewall portion of the IDC is urged into abutting engagement with the at least one abutment surface on the substrate. Another method prevent solder from causing short circuits between adjacent terminals. A plurality of grooves extending laterally outwardly from a central recessed portion are formed. The plurality of grooves defining a plurality of inwardly projecting fingers. A plurality of contact pads on are formed on a respective plurality of fingers. A solder bead is formed on at least some of the plurality of contact pads. The at least one solder bead is isolated from adjacent solder beads and adjacent terminals.

Abstract: A method of registering terminals on an interdigitated chip capacitor (“IDC”) with a plurality of contact pads on a substrate. At least one vertically extending nonconductive abutment surface is formed between adjacent ones of the contact pads. A plurality of grooves projecting outwardly from said a central recess is formed on the substrate top portion. At least one sidewall portion of the IDC is urged into abutting engagement with the at least one abutment surface on the substrate. Another method prevent solder from causing short circuits between adjacent terminals. A plurality of grooves extending laterally outwardly from a central recessed portion are formed. The plurality of grooves defining a plurality of inwardly projecting fingers. A plurality of contact pads on are formed on a respective plurality of fingers. A solder bead is formed on at least some of the plurality of contact pads. The at least one solder bead is isolated from adjacent solder beads and adjacent terminals.

Abstract: An interdigitated chip capacitor (“IDC”) assembly including an IDC having a semiconductor block with a top portion, a bottom portion opposite the top portion, a plurality of sidewall portions extending between the top and bottom portions, and a plurality of terminals located on the sidewall portions; and a substrate having a top portion with a plurality of generally flat, vertically extending, nonconductive abutment surfaces thereon, the sidewall portions of the IDC being abuttingly engaged with at least some of the plurality of abutment surfaces.

Abstract: An interdigitated chip capacitor (“IDC”) assembly including an IDC having a semiconductor block with a top portion, a bottom portion opposite the top portion, a plurality of sidewall portions extending between the top and bottom portions, and a plurality of terminals located on the sidewall portions; and a substrate having a top portion with a plurality of generally flat, vertically extending, nonconductive abutment surfaces thereon, the sidewall portions of the IDC being abuttingly engaged with at least some of the plurality of abutment surfaces.