Abstract: Systems and methods are provided for managing the order of data written to a transaction log in a distributed storage system. In a system with multiple nodes, if sequencers are naively generated without taking into consideration inconsistencies among the different nodes generating the sequencers, then the sequencers may not increase for each data transaction. To alleviate this problem, the node committing the transaction to the transaction log may perform a consistent read and verifies that the sequencer advances. If the sequencer does not advance, the node can perform a context-dependent operation such as adjusting the sequencer, acknowledging the write without committing it to the transaction log, or rejecting the write altogether.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: Unstructured data items are stored at an object storage service. A filtering criterion to be used to generate a result set for an access request is determined. A test that can be used to determine, without completing parsing of a record identified in an unstructured data item, whether the record satisfies the filtering criterion is identified. Parsing of a particular record is abandoned in response to determining, using the test, that the record satisfies the filtering criterion. A response to the access request is determined using a subset of records that satisfy the filtering criterion.

Abstract: Apparatus for constructing an alkali metal energy conversion device, for example a sodium sulphur cell. Such cells typically employ a solid electrolyte element separating cathodic and anodic reactants which are liquid at the cell operating temperature.