Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. Various magnets located along the beamline are provided for manipulating the ion beam and ions. Ion beam implanters having magnets including superconducting magnet coils are disclosed.