Patents by Inventor John Pohl

John Pohl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned STI process using nitride hard mask
    Patent number: 6551874
    Abstract: A nitride hard mask (230) is used to isolate active areas of a DRAM cell. The shallow trench isolation (STI) method includes forming memory cells comprising deep trenches (216) on a semiconductor wafer (200). The memory cell deep trenches (216) are separated from active areas (212) by a region of substrate (212). A nitride hard mask (230) is formed over the semiconductor wafer (200). The wafer (200) is patterned with the nitride hard mask (230), and the wafer (200) is etched to remove the region of substrate (212) between the deep trenches and active areas to provide shallow trench isolation. An etch chemistry selective to the nitride hard mask (230) is used.
    Type: Grant
    Filed: June 22, 2001
    Date of Patent: April 22, 2003
    Assignee: Infineon Technologies, AG
    Inventors: John Pohl, Nirmal Chaudhary, Veit Klee, Tobias Mono, Paul Schroeder
  • Self-aligned STI process using nitride hard mask
    Publication number: 20030045051
    Abstract: A nitride hard mask (230) is used to isolate active areas of a DRAM cell. The shallow trench isolation (STI) method includes forming memory cells comprising deep trenches (216) on a semiconductor wafer (200). The memory cell deep trenches (216) are separated from active areas (212) by a region of substrate (212). A nitride hard mask (230) is formed over the semiconductor wafer (200). The wafer (200) is patterned with the nitride hard mask (230), and the wafer (200) is etched to remove the region of substrate (212) between the deep trenches and active areas to provide shallow trench isolation. An etch chemistry selective to the nitride hard mask (230) is used.
    Type: Application
    Filed: June 22, 2001
    Publication date: March 6, 2003
    Applicant: Infineon Technologies North America Corp.
    Inventors: John Pohl, Nirmal Chaudhary, Veit Klee, Tobias Mono, Paul Schroeder
  • Method of measuring combined critical dimension and overlay in single step
    Patent number: 6440759
    Abstract: A semiconductor wafer structure in a overlay pattern that permits determination of overlay and critical dimension features by CD SEM in a single pass along a given axis, comprising: a) a center feature section that provides a critical dimension point along a given axis; b) plurality of smaller sections positioned adjacent to the center feature section along the given axis that include a plurality of spaces between each of the plurality of smaller sections; and c) a plurality of displacement lines adjacent to the plurality of the smaller sections to displace a plurality of spaces.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: August 27, 2002
    Assignee: Infineon Technologies AG
    Inventors: Martin Commons, Tobias Mono, Velt Klee, John Pohl, Paul Wensley
  • Method of forming constriction in tubing
    Patent number: 3967489
    Abstract: The present invention provides a method of forming a flow restriction in a tube to be used as a capillary in a refrigeration system. The method includes shaping the tube longitudinally to a preselected configuration, and then squeezing a section of the tube while directing a fluid therethrough until the fluid reaches a preselected pressure.
    Type: Grant
    Filed: May 15, 1975
    Date of Patent: July 6, 1976
    Assignee: General Electric Company
    Inventors: Walter John Pohl, Roy W. Abbott
  • Patient monitor device
    Patent number: D761434
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: July 12, 2016
    Assignee: Medtronic, Inc.
    Inventors: Stephen Nelson, Gerald Herman, Patrick Gerrells, David Peichel, John Pohl, David Walsh, Ryan Wyszynski, Daniel M. Gelfman