Patents by Inventor John R. Appert

John R. Appert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rear entry photodiode with three contacts
    Patent number: 4794439
    Abstract: A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.
    Type: Grant
    Filed: March 19, 1987
    Date of Patent: December 27, 1988
    Assignee: General Electric Company
    Inventors: Paul P. Webb, John R. Appert, Ronald E. Enstrom