Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.

Abstract: Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made. In one example, a portion of a region such as a semiconductor lithography pattern is subtracted from consideration in identifying potential optical interactions. In one example, a ring-like region remains and is analyzed.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.

Abstract: The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

Abstract: The invention encompasses an optical proximity correction method. A substrate is provided which is to be formed into a radiation-patterning tool. A first dataset is provided to define a first radiation masking pattern for a first part of the tool, and a second dataset is provided to define a second radiation masking pattern for a second part of the tool. OPC calculations are performed on the second dataset, and the second dataset is modified based on the calculations. The OPC calculations of the second dataset utilize at least a portion of the first dataset, but do not modify said portion of the first dataset. A pattern supported by the radiation-patterning tool substrate is formed utilizing the modified second dataset. The invention also encompasses a method of forming a radiation patterning tool. At least one DRAM array area of a semiconductive material substrate is defined, and at least one peripheral circuitry area is defined proximate the at least one DRAM array area.

Abstract: Disclosed herein is the formation of a ball grid array testing receiver that is scalable for design consideration of miniaturization. A dielectric layer is formed upon a substrate that is substantially conformal to the upper surface of the substrate. A patterned masking layer is formed upon the dielectric layer and a subsequent etch forms a depression within the substrate and forms a ledge on the surface of the substrate that is adjacent to the depression. After formation of the ledge, a metal layer is formed continuously on the ledge and within the depression. Following the formation of the metal layer, a masking layer is formed upon the metal layer. The masking layer is patterned so as to form a desired arrangement of metal lines by etching the underlying metal layer. The formation of the ledge enables the masking layer to resist formation of a breach between the surface of the substrate and the depression.

Abstract: The present invention relates to the formation of a ball grid array testing receiver that is scalable for design consideration of miniaturization. A dielectric layer is formed upon a substrate that is substantially conformal to the upper surface of the substrate. A patterned masking layer is formed upon the dielectric layer and a subsequent etch forms a depression within the substrate and forms a ledge on the surface of the substrate that is adjacent to the depression. After formation of the ledge, a metal layer is formed continuously on the ledge and within the depression. Following the formation of the metal layer, a masking layer is formed upon the metal layer. The masking layer is patterned so as to form a desired arrangement of metal lines by etching the underlying metal layer. The formation of the ledge enables the masking layer to resist formation of a breach between the surface of the substrate and the depression.

Abstract: The present invention relates to the formation of a ball grid array testing receiver that is scalable for design consideration of miniaturization. A dielectric layer is formed upon a substrate that is substantially conformal to the upper surface of the substrate. A patterned masking layer is formed upon the dielectric layer and a subsequent etch forms a depression within the substrate and forms a ledge on the surface of the substrate that is adjacent to the depression. After formation of the ledge, a metal layer is formed continuously on the ledge and within the depression. Following the formation of the metal layer, a masking layer is formed upon the metal layer. The masking layer is patterned so as to form a desired arrangement of metal lines by etching the underlying metal layer. The formation of the ledge enables the masking layer to resist formation of a breach between the surface of the substrate and the depression.