Abstract: In some embodiments, crossbow comprises a frame, a bow portion comprising a bowstring, a latch and a trigger. An arrow rest is supported by the frame at a first location. The frame is also arranged to support the arrow rest at a second location. A distance between the latch and the first location is different from a distance between the latch and the second location.

Abstract: An efficient hardware cache manager controls the top-of-stack data underflow/overflow. A processor chip includes a processor, a stack buffer and the invented cache management hardware. The processor chip communicates with a remove overflow stack through an address/data bus. The cache management hardware efficiently manages overflow and underflow to and from the processor chip in such a manner less than 1% of the processor's time is spent managing the stack cache.

Abstract: A method of fabricating a lateral bipolar heterojunction transistor and the transistor itself. In a first embodiment a first semiconductor layer of, for instance, InGaAsP is epitaxially grown on an insulating substrate with the subsequent selective area epitaxial regrowth of a second semiconductor layer, of for instance, InP on the substrate and adjacent to the base. The selective area regrowth forms the collector and emitter. Alternatively, the emitter and collector can be grown first and the base is regrown. In both cases, the semiconductor regrowth is epitaxial to the underlying substrate and to the semiconductor material at the side. Thereby, interface damage at the interface between the base and the emitter or collector is reduced so as to allow lateral minority carrier transport across the junction and small area junctions at low capacitance.

Abstract: A heterojunction bipolar transistor having means for changing carrier transport properties is described.

Abstract: A self-aligned process for fabricating a GaAs semiconductor MESFET by depositing a layer of tungsten over the GaAs substrate, and ion implanting the substrate to provide channel doping. A gate composed of a conductive refractory material is deposited and delineated on the tungsten layer, and source and drain regions are formed in the substrate using the gate as a mask. The resulting device is annealed and contacts are formed to the source and drain regions, and to the gate.

Abstract: A regenerator assembly for a gas turbine engine has a hot side seal assembly formed in part by a cast metal engine block having a seal recess formed therein that is configured to supportingly receive ceramic support blocks including an inboard face thereon having a regenerator seal face bonded thereto. A pressurized leaf seal is interposed between the ceramic support block and the cast metal engine block to bias the seal wear face into sealing engagement with a hot side surface of a rotary regenerator matrix.