Abstract: Described are circuits and techniques to communicate a digital envelope signal from a baseband chipset to a discrete supply modulator power management circuit (PMC). Also described is an apparatus and technique for power management control over a radio frequency (RF) transmission line for millimeter wave chip sets for cellular radios.

Abstract: Described is a power transmission gate which includes a charge pump, an NMOS transistor, and a gate driver circuit configured to power (or bias or “drive”) a gate of the NMOS transistor. With this arrangement, a power transmission gate capable of achieving substantially the same resistance provided by prior art power transmission gates while having a footprint of just over one NMOS size unit is provided.

Abstract: Described is a power transmission gate which includes a charge pump, an NMOS transistor, and a gate driver circuit configured to power (or bias or “drive”) a gate of the NMOS transistor. With this arrangement, a power transmission gate capable of achieving substantially the same resistance provided by prior art power transmission gates while having a footprint of just over one NMOS size unit is provided.

Abstract: A pulse-shaping network configured for use in a radio frequency (rf) power amplifier system, the pulse-shaping network comprising: a coupled magnetic element comprising a first inductive element magnetically coupled to a second inductive element, the first inductive element comprising a first winding disposed about a first portion of a core, and the second inductive element comprising a second winding disposed about a second portion of a core, wherein the first and second inductive elements are electrically coupled to provide three output terminals of the coupled magnetic element.

Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: Described is a system for modulating power to one or more radio frequency (RF) amplifiers to suppress undesired output signal components, improve linearity and reduce noise. The described systems and techniques enable shaping of spectral components introduced via an amplifier bias voltage owing to transitions among bias discrete states. The systems and techniques facilitate operation of multilevel, RF amplifiers under a wider range of operating conditions. In embodiments, the system includes modulators coupled to a supply terminal port of each of the one or more amplifiers to modulate the voltage levels supplied to the one or more amplifiers. The outputs of the modulators may be combined to provide a combined signal coupled to the amplifiers. A delay circuit delays switching of at least one of the power modulators relative to other modulator, by a variable time delay. This results in suppression of undesired output signal components of the amplifier output.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: In a discrete supply modulation system, a circuit includes a multi-stage pulse shaping network (PSN) having a first PSN stage having an input configured to receive variable bias supply signals from a power management circuit (PMC) and having an output coupled to one or more second PSN stages with each of the one or more second PSN stages having an output configured to be coupled to a supply (or bias) terminal of a respective one of one or more radio frequency amplifiers. Such an arrangement is suitable for use with transmit systems in mobile handsets operating in accordance with 5th generation (5G) communications and other connectivity protocols such as 802.11 a/b/g/n/ac/ax/ad/ay and is suitable for use with multiple simultaneous transmit systems including multiple-input, multiple-output (MIMO), uplink carrier aggregation (ULCA) and beamforming.

Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.

Abstract: A circuit comprising a first capacitor configured to be charged to a voltage representing state information of a compensator, a second capacitor, a buffer circuit configured to charge the second capacitor to a voltage substantially equal to that of the first capacitor and a switching network configured to transition between a first state and a second state. When the switching network is in the first state, the second capacitor is charged to the voltage across the first capacitor. When the switching network is in the second state, the buffer circuit is disconnected from the second capacitor and the first capacitor and the second capacitor are connected in parallel.

Abstract: A power supply modulator circuit includes a multi-output power supply that generates multiple power output signals; at least one power modulator circuit generates a modulated power output signal from the multiple power output signals of the multi-output power supply; at least one pulse shaping network (PSN) having at least one passive element, the PSN configured to shape the modulated power output signal; at least one power amplifier coupled to receive the modulated power signal; and a switching network having a plurality of switches to create or modify power signal paths from the at least one power modulator circuit to the at least one power amplifier.

Abstract: A circuit configured to receive a first and second voltages and generate an output voltage, the circuit comprising: a first capacitor configured to charge to a voltage equal a difference between the first voltage and the output voltage; a second capacitor configured to charge to a voltage equal to a difference between the first voltage and the second voltage; and a plurality of conductive paths coupled to the first and second capacitors. In a first state, the conductive paths are configured to cause the second capacitor to charge to the voltage equal to the difference between the first voltage and the second voltage. In a second state, the conductive paths are configured to cause the second capacitor to be connected in parallel with the first capacitor to cause the first capacitor to charge to the voltage equal to the difference between the first voltage and the output voltage.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) overtime depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: Described are circuits and techniques to communicate a digital envelope signal from a baseband chipset to a discrete supply modulator power management circuit (PMC). Also described is an apparatus and technique for power management control over a radio frequency (RF) transmission line for millimeter wave chip sets for cellular radios.

Abstract: Described are circuits and techniques to communicate a digital envelope signal from a baseband chipset to a discrete supply modulator power management circuit (PMC). Also described is an apparatus and technique for power management control over a radio frequency (RF) transmission line for millimeter wave chip sets for cellular radios.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) overtime depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: Described are circuits and techniques to communicate a digital envelope signal from a baseband chipset to a discrete supply modulator power management circuit (PMC). Also described is an apparatus and technique for power management control over a radio frequency (RF) transmission line for millimeter wave chip sets for cellular radios.