Abstract: A method of forming bottom electrodes in a resistive memory device, can include: depositing a bottom insulator on a substrate ILD; forming vias in the substrate by patterning and etching holes in the bottom insulator and the substrate ILD; filling the holes with a via metal to form a flat via surface; depositing a bottom electrode thin film and a top insulator; defining the bottom electrode; etching the top insulator, the bottom electrode thin film, and the bottom insulator; depositing a cell plate layer having a switching layer, an anode layer, and a cap layer; patterning the cell plate layer by depositing and patterning a cell plate hard mask layer, and then etching the cell plate layer; encapsulating the cell plate layer; and forming electrical contact to the cell plate layer.

Abstract: An integrated circuit device can include a plurality of nonvolatile memory elements having values that vary randomly or pseudo-randomly from one another; a selection circuit configured to select a plurality of nonvolatile memory elements that vary randomly or pseudo-randomly in response to a received challenge value; and sense circuits configured to generate a response value based on the values of the selected nonvolatile memory elements. Related methods and systems are also disclosed.

Abstract: A memory device includes a memory array arranged in rows and columns; memory cell layers at each row and column intersection, where each memory cell layer is configured to be set to a predetermined conductance state; a row control circuit that is configured to apply voltages to the rows by applying sub-voltages on each row, where each sub-voltage corresponds to a different memory cell layer, and where each sub-voltage is proportional to the voltage on the corresponding row; and a sensing circuit that is configured to determine a column current flowing through a selected column in response to the application of the voltages to the rows, where the column current is a sum of currents through each memory cell layer that corresponds to the selected column.

Abstract: In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.

Abstract: In one embodiment, a capacitive circuit can include: (i) a resistive storage element having a solid electrolyte, a first electrode coupled to a first side of the solid electrolyte, and a second electrode coupled to a second side of the solid electrolyte; (ii) the resistive storage element being configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction to form a conductive path between the first and second electrodes, and being configured to be erased to a high resistance state by application of an erase voltage in a reverse bias direction to substantially dissolve the conductive path; and (iii) a first capacitor having the first electrode coupled to a first side of a first oxide layer, and a third electrode coupled to a second side of the first oxide layer.

Abstract: In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.

Abstract: In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.

Abstract: A multi-ply form with labels and multiple form parts is provided, including first and second webs secured one to the other with repositionable adhesive. A plurality of different types of labels are permanently secured to the second web. At least one label of the second web registers with a die-cut portion in the second web and both the one label and die-cut portion register with a die-cut section of the first web. When the webs are separated, the die-cut section is adhered to the second web, enabling removal of the one label therefrom in a manner to provide securment to a surface using either repositionable adhesive or permanent adhesive. Additional holding power may be provided when using the repositionable adhesive by providing a further die-cut segment within the die-cut section of the first web whereby the area of application of the adhesive may be large or small, depending upon whether the die-cut section is removed or not. The first web also includes a second section forming a first form part.

Abstract: A multi-ply form with labels is provided, including first and second webs secured one to the other with repositionable adhesive. A plurality of different types of labels are permanently secured to the second web. At least one label of the second web registers with a die-cut portion in the second web and both the one label and die-cut portion register with a die-cut section of the first web. When the webs are separated, the die-cut section is adhered to the second web, enabling removal of the one label therefrom in a manner to provide securement to a surface using either repositionable adhesive or permanent adhesive. Additional holding power may be provided when using the repositionable adhesive by providing a further die-cut segment within the die-cut section of the first web whereby the area of application of the adhesive may be large or small, depending upon whether the die-cut section is removed or not.