Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.

Abstract: A SNS Josephson junction (10) is provided for use in a superconducting integrated circuit. The SNS junction (10) includes a first high temperature superconducting (HTS) layer (14) deposited and patterned on a substrate (18), such that the first HTS layer (14) is selectively removed to expose a top surface of the substrate (18) as well as to form an angular side surface (22) on the first HTS layer (14) adjacent to the exposed top surface of the substrate (18). Ion implantation is used to form a junction region (12) having non-superconducting properties along the angular side surface (22) of the first HTS layer (14). A second HTS layer (16) is then deposited and patterned over at least a portion of the first HTS layer (14) and the exposed top surface of the substrate (18), thereby forming a SNS Josephson junction.

Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.