Abstract: A clamping system is designed to clamp floating point values from a geometry accelerator in a computer graphics system. The clamping system includes a register configured to receive the floating point value from a connection from the geometry accelerator in the graphics system. Logic associated with the register is configured to determine when the value is less than or equal to a first threshold value (preferably, 0), greater than or equal to a second threshold value (preferably, 1), and between the first and second threshold values. An output mechanism is controlled by the logic. In the preferred embodiment, the output mechanism is a multiplexer interconnected with a tristate driver.

Abstract: A semiconductor memory cell, and methods of fabricating same, that includes a substrate (10) and a plurality of trench capacitors (12) formed at least partially within the substrate and dielectrically isolated therefrom. A silicon-on-insulator (SOI) region includes a silicon layer (16) that overlies an insulator (14). The silicon layer is differentiated into a plurality of active device regions, each of which is disposed above one of the electrically conductive regions. Each of the active device regions is coupled to an overlying first electrode, or wordline (20), for forming a gate node of an access transistor (1), to a second electrode, or bitline (32), for forming a source node of the access transistor, and to the underlying trench capacitor for forming a drain node of the access transistor.