Patents by Inventor John R. Pfiester

John R. Pfiester has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compact SRAM cell with polycrystalline silicon diode load
    Patent number: 5021849
    Abstract: A compact SRAM cell and method for its fabrication are disclosed. The small size of the SRAM cell is achieved by fabricating a diode load immediately above the gate electrode of each of the cross coupled transistors of the cell. In accordance with one embodiment, the gate electrode and diode structure include, in sequence, an N-type doped polycrystalline silicon layer, an electrically conductive diffusion barrier layer, a P-type doped polycrystalline silicon layer and an N-type doped polycrystalline layer.
    Type: Grant
    Filed: October 30, 1989
    Date of Patent: June 4, 1991
    Assignee: Motorola, Inc.
    Inventors: John R. Pfiester, Richard W. Mauntel