Abstract: Observing an object within a visual blind spot of a motor vehicle includes using a mirror with at least one motor mechanically coupled thereto. Preferably, a position of the side view mirror can be adjusted by the at least one motor. An object detector detects objects within a visual blind spot of a vehicle. The object detector is operable to provide a detection signal to the at least one motor to adjust a position of the mirror to provide a view of the blind spot to a driver of the vehicle. The view can be toggled between normal viewing and blind spot viewing depending on the detection signal. The view can also be adjusted to track the object.

Abstract: The disclosed embodiments may relate to vehicle (10) having a control system (12) located within the vehicle (10). The control system (12) may include a processor (26) and a wake-up circuit (46) coupled to the processor (26). The processor (26) may utilize a program (34) during a standby mode of operation. The program (34) is configured to provide a voltage to the wake-up circuit (46) for a first time period (T1) once an interrupt is received by the processor (26). Then, the program (34) may monitor the wake-up circuit (46) for a second time period (T2). If a response of the wake-up circuit (46) exceeds at least one of a plurality of predetermined limits, then the program (34) may recalibrate the wake-up circuit (46).

Abstract: A loss-less load current sensing driver and method includes providing current (603) to a load from a power supply through a transistor. A voltage drop is measured (605) across the transistor responsive to the provision of current to the load. A temperature of the transistor is measured (607) and a temperature-indicating signal is provided. The temperature-indicating signal is translated (609) into a predicted transistor on-resistance. A magnitude of the current provided to the load is determined dependent on the measured voltage drop across the transistor and the predicted transistor on-resistance, preferably by dividing (611) the measured voltage drop by the predicted transistor on-resistance.

Abstract: A temperature-indicating field effect transistor (100) includes a transistor die (101) including a drain (103), a source (105), and a gate (107). A temperature measurement device (109, 111) is thermally coupled to the transistor die (101) and electrically coupled to the gate (107). A transistor package (113) encapsulates the transistor die (101) and the temperature measurement device (109, 111). The transistor package (113) has three externally accessible terminals including a first terminal (115) connected to the drain (103), a second terminal (117) connected to the source (105), and an input terminal (119) coupled to the temperature measurement device (109, 111).

Abstract: An inductive load driver circuit with shared flyback protection includes a first transistor (209) which drives a first load (229), and a second transistor (231) drives a second load (251). A first clamp voltage steering diode (217) is coupled between an input terminal (207) of the first transistor (209) and a zener diode (203), and a second clamp voltage steering diode (239) coupled between an input terminal (233) of the second transistor (231) and the zener diode (203). A power supply terminal (201) is coupled to the zener diode (203).

Abstract: FET protection circuit (10; 100) senses the temperature of a FET (11) and, via a control circuit (24), increases FET conduction in response to sensed FET temperature exceeding a high temperature threshold (160.degree. C.) close to the maximum rated junction temperature (175.degree. C.) of the FET. This allows the FET to survive excessive drain-to-source voltages which occur during load dump conditions even when load dump is sensed by a zener diode (26) which initially turns on the FET. During load dump after a zener diode (26) turns on the FET, in response to sensing excessive FET temperature the FET is turned in harder so as to reduce the drain-to-source voltage (V.sub.DS) and minimize power dissipation during load dump thereby protecting the FET. Normal overcurrent and maximum temperture turn off circuitry (44, 33, 60-63) is effectively overridden by high temperature threshold turn-on circuitry (50).

Abstract: Inductor coil (13) of a relay (12) used to supply battery power to a power load (11) of a vehicle engine control system (10) is also used to provide a substantially higher than battery voltage (V.sub.Batt) boost voltage (V.sub.Boost) for vehicle control apparatus (20). Microprocessor (21) generates a control signal (V.sub.in) having a 10:1 duty cycle for control of current excitation of the coil (13) during an effective on logic state for the relay (12). During coil current interruptions during the on logic state, energy stored in the inductor (13) is utilized via a rectifier means (26 and 27) to provide the boost voltage. During the on relay state, a movable member (14) of the relay is maintained in its actuated position since current interruptions during the on state are shorter than the relaxation time required for the movable member to assume a nonactuated state.