Patents by Inventor John R. Zuber

John R. Zuber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Restricted contact planar photodiode
    Patent number: 4990989
    Abstract: An InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants. The photodiode may be back-illuminated or front-illuminated.
    Type: Grant
    Filed: January 12, 1990
    Date of Patent: February 5, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Mahmoud A. ElHamamsy, Stephen R. Forrest, John R. Zuber
  • Restricted contact, planar photodiode
    Patent number: 4894703
    Abstract: A back-illuminated InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants.
    Type: Grant
    Filed: August 20, 1985
    Date of Patent: January 16, 1990
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Mahmoud A. E. Hamamsy, Stephen R. Forrest, John R. Zuber
  • Preparation of photodiodes
    Patent number: 4455351
    Abstract: A process is described for fabricating various optical devices including photodiodes in which a protective dielectric layer is put down on the surface of the device prior to heating to temperatures over about 250-300 degrees C. Such devices have excellent performance characteristics including low dark current and low noise figures.
    Type: Grant
    Filed: June 13, 1983
    Date of Patent: June 19, 1984
    Assignee: AT&T Bell Laboratories
    Inventors: Irfan Camlibel, Shobha Singh, LeGrand G. Van Uitert, John R. Zuber, George J. Zydzik
  • Method of stripping photoresist
    Patent number: 4202703
    Abstract: A solution of tetramethylammonium hydroxide and a surfactant in a lower alcohol solubilizes photoresist films without attacking materials found in integrated circuit devices so that a subsequent 1,1,1-trichloroethane rinse completely removes the photoresist.
    Type: Grant
    Filed: November 7, 1977
    Date of Patent: May 13, 1980
    Assignee: RCA Corporation
    Inventors: John R. Zuber, Herbert Foxman
  • Novel solvent drying agent
    Patent number: 4169807
    Abstract: Mixtures of 1-propanol, water and certain perfluoro compounds form excellent drying agents for silicon based devices. The mixtures have good wetting properties and form azeotropic mixtures in the vapor phase.
    Type: Grant
    Filed: March 20, 1978
    Date of Patent: October 2, 1979
    Assignee: RCA Corporation
    Inventor: John R. Zuber