Abstract: A method for making tantalum sputtering targets with stable through thickness {100}+{111} preferred crystallographic orientation volume fraction is disclosed. Starting from electron beam melted tantalum ingots, the method includes various forging, controlled rolling and recrystallization annealing. The resultant tantalum sputtering targets yield stable deposition rate and film uniformity from burn-in through the end-of-life during sputtering. Also disclosed is a tantalum sputtering target made in accordance with the disclosed method.

Abstract: Provided is a vacuum seal and seal system including a corresponding isolation ring and a corresponding sputtering target. The seal and seal system may be used in PVD sputter applications. The seal may include a compressible portion and a rigid portion. The compressible portion may include two or more higher profile protrusions and two or more lower profile recesses that facilitate formation of a vacuum seal through compression by and between the isolation ring and the sputtering target. The seal may further include a removable and replaceable plasma shield that is attachable to a first end of the seal. The seal may further include a rim on a second end that selectively couples with a corresponding step-out portion of the isolation ring. The sputtering target may have a continuous peripheral flange surface. In an embodiment, the seal and seal system is self-centering.

Abstract: A method for making tantalum sputtering targets with stable through thickness {100}+{111} preferred crystallographic orientation volume fraction is disclosed. Starting from electron beam melted tantalum ingots, the method includes various forging, controlled rolling and recrystallization annealing. The resultant tantalum sputtering targets yield stable deposition rate and film uniformity from burn-in through the end-of-life during sputtering. Also disclosed is a tantalum sputtering target made in accordance with the disclosed method.

Abstract: Provided is a vacuum seal and seal system including a corresponding isolation ring and a corresponding sputtering target. The seal and seal system may be used in PVD sputter applications. The seal may include a compressible portion and a rigid portion. The compressible portion may include two or more higher profile protrusions and two or more lower profile recesses that facilitate formation of a vacuum seal through compression by and between the isolation ring and the sputtering target. The seal may further include a removable and replaceable plasma shield that is attachable to a first end of the seal. The seal may further include a rim on a second end that selectively couples with a corresponding step-out portion of the isolation ring. The sputtering target may have a continuous peripheral flange surface. In an embodiment, the seal and seal system is self-centering.

Abstract: A method for making tantalum sputtering targets with stable through thickness {100}+{111} preferred crystallographic orientation volume fraction is disclosed. Starting from electron beam melted tantalum ingots, the method includes various forging, controlled rolling and recrystallization annealing. The resultant tantalum sputtering targets yield stable deposition rate and film uniformity from burn-in through the end-of-life during sputtering. Also disclosed is a tantalum sputtering target made in accordance with the disclosed method.

Abstract: Provided is a vacuum seal and seal system including a corresponding isolation ring and a corresponding sputtering target. The seal and seal system may be used in PVD sputter applications. The seal may include a compressible portion and a rigid portion. The compressible portion may include two or more higher profile protrusions and two or more lower profile recesses that facilitate formation of a vacuum seal through compression by and between the isolation ring and the sputtering target. The seal may further include a removable and replaceable plasma shield that is attachable to a first end of the seal. The seal may further include a rim on a second end that selectively couples with a corresponding step-out portion of the isolation ring. The sputtering target may have a continuous peripheral flange surface. In an embodiment, the seal and seal system is self-centering.

Abstract: In one aspect of the invention, a sputter target is provided comprising a backing plate (40) comprising a front surface and a back surface; and a sputtering plate mounted on said backing plate, the sputtering plate comprising a sputtering surface and a back surface. At least one of the back surface of the sputtering plate, the front surface of the backing plate, or the back surface of the backing plate has at least one groove (30) that is shaped and sized to correspond to an observed region of higher sputtering of the sputtering plate relative to an adjacent area of the sputtering plate. An insert (50) is placed in the groove(s). The backing plate comprises a first material, the sputtering plate comprises a second material, and an insert comprises a third material. In yet another aspect of the sputter target, a method of controlling the electromagnetic properties of a sputter target is provided.