Abstract: A process for passivating a metal surface to enhance the stability of a gas mixture containing one or more gaseous hydrides in low concentration in contact therewith, which comprises:a) purging gas in contact with said metal surface with inert gas to remove the purged gas,b) exposing the metal surface to an amount of a gaseous passivating agent comprising an effective amount of a gaseous hydride of silicon, germanium, tin or lead and for a time sufficient to passivate said metal surface, andc) purging said gaseous passivating agent using inert gas.

Abstract: A purification method and apparatus for creating ultra-purity chemicals for semiconductor processing. The purification method includes a step of expanding an ESG chemical through an orifice (17) inside a condenser (21) to a partial condensed state for removing impurities from ESG chemical. During the expansion step, the higher boiling point impurities remain in the liquid phase and the impurities in the vapor phase are removed at least in part by a scavenging technique. After purification, the ultra-purified gas is transferred to a semiconductor manufacturing operation (24). The manufacturing operation includes both dry and wet processes. The method may also be integrated into a large volume on-site purification system (30), on-line point of use purifier (50), or small volume trans-filling purification system (70).

Abstract: A process for drying a metal surface to enhance the stability of a gas mixture containing one or more gaseous hydrides in low concentration in contact therewith, which comprises: a) purging gas in contact with the metal surface with inert gas to remove the purged gas, b) exposing the metal surface to an amount of a drying agent comprising an effective amount of gaseous hydride of silicon, germanium, tin or lead, and for a time sufficient to dry the metal surface, and c) purging the drying agent using inert gas.