Patents by Inventor John Roger Gill

John Roger Gill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for on chip sensing of SONOS Vwindow in non-volatile static random access memory
    Patent number: 7710776
    Abstract: A system and method for determining a SONOS VT window using a current sensing scheme is disclosed. The present invention creates a first current path and a second current path through the volatile and non-volatile sections of an nvSRAM memory cell. The erase threshold voltage of the first edge of the window is determined when current is detected in the first path. The program voltage of the second edge of the window is determined when current is detected in the second path. Accordingly, the voltage used to power a plurality of SONOS transistors may be set using the values of the first and second threshold edges to determine the VT window.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: May 4, 2010
    Assignee: Cypress Semiconductor Corporation
    Inventors: Jaskarn Johal, Daryl Dietrich, John Roger Gill
  • Method and apparatus to program both sides of a non-volatile static random access memory
    Patent number: 7518916
    Abstract: A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: April 14, 2009
    Assignee: Cypress Semiconductor Corporation
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan, John Roger Gill
  • Method and apparatus for on chip sensing of SONOS VT window in non-volatile static random access memory
    Publication number: 20080158981
    Abstract: A system and method for determining a SONOS VT window using a current sensing scheme is disclosed. The present invention creates a first current path and a second current path through the volatile and non-volatile sections of an nvSRAM memory cell. The erase threshold voltage of the first edge of the window is determined when current is detected in the first path. The program voltage of the second edge of the window is determined when current is detected in the second path. Accordingly, the voltage used to power a plurality of SONOS transistors may be set using the values of the first and second threshold edges to determine the VT window.
    Type: Application
    Filed: December 27, 2006
    Publication date: July 3, 2008
    Inventors: Jaskarn Johal, Daryl Dietrich, John Roger Gill
  • Method and apparatus to program both sides of a non-volatile static random access memory
    Publication number: 20080151616
    Abstract: A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan, John Roger Gill