Abstract: A method of fabricating film circuits whereby thick film crossunders may be included with thin film capacitors (22) on a single substrate (10). At least one dielectric layer (12) is formed on the crossunder electrode (11) and a layer capable of smoothing irregularities (13) is also formed in the area of capacitor formation. Firing of the capacitor underlayer is compatible with the dielectric layer. A layer such as beta tantalum (14) is formed over essentially the entire circuit and etched from the contact areas (21) of the crossunder electrode. The layer is oxidized to form a protective layer (15) for the previously deposited layers as well as an underlay for subsequently formed thin film components.