Abstract: In one aspect, authentication information is received from a first processing device in a second processing device, and a digital signature is generated in the second processing device by signing data that incorporates at least a portion of the received authentication information. The received authentication information is generated at least in part from a secret seed stored in the first processing device. The received authentication information may be combined with the digital signature generated by the second processing device to form a joint signature that is transmitted to an authentication server. In an illustrative embodiment, the received authentication information comprises a tokencode and the digital signature is generated by signing data that incorporates the tokencode. The data that is signed to generate the digital signature may comprise an electronic document having the tokencode appended thereto.

Abstract: A composite transparent conducting film (TCF) on a substrate that includes a first region extending to a first depth of the TCF and having a higher density (lower porosity) than a second region of the TCF located at a different depth of the TCF. A method of forming the composite TCF includes applying a transparent conducting layer onto a substrate or onto a second layer previously formed on the substrate, and rapidly heating the transparent conducting layer resulting in a first region extending to a first depth of the transparent conducting layer that is at least partially melted and of a higher density (lower porosity) than a second region located at a different depth of the transparent conducting layer that is not melted, thereby forming a composite TCF that has a change of porosity in a thickness direction of the composite TCF.

Abstract: This invention provides a process for producing high-purity dense polycrystalline III-nitride slabs. A vessel which contains a group III-metal such as gallium or an alloy of group III-metals of shallow depth is placed in a reactor. The group III-metal or alloy is heated until a molten state is reached after which a halide-containing source mixed with a carrier gas and a nitrogen-containing source is flowed through the reactor vessel. An initial porous crust of III-nitride forms on the surface of the molten III-metal or alloy which reacts with the nitrogen-containing source and the halide-containing source. The flow rate of the nitrogen-containing source is then increased and flowed into contact with the molten metal to produce a dense polycrystalline III-nitride. The products produced from the inventive process can be used as source material for III-nitride single crystal growth which material is not available naturally.

Abstract: A compact open-rated HID lamp (10) having a shrouded arc tube (12) positioned within a compact outer envelope (28), which lamp (9) has an arc tube mounting assembly (30) characterized by a long lead wire (32) which extends from the press seal (29) at the base end (28A) of the outer envelope (28), winds helically around the shroud (26) and extends into and is biased outwardly against the distal end (28B) of the outer envelope (28), thus not only conducting current to the distal electrode (24) of the arc tube (12), but also centering and supporting the retaining shroud (26) and supplementing the shroud's retainment function with minimal parts and minimal wire connections. In addition, arc displacement is minimized, leading to higher lumen maintenance and longer lifetimes.

Abstract: Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method is conducted in a reactor that is maintained at a pressure below one atmosphere for enhanced uniformity of gas flow and of MN product. The MN is then deposited on a substrate, on one or more seeds or it can self-nucleate on the walls of a growth chamber, to form high purity and uniform metal nitride material. The inventive MN material finds use in semiconductor materials, in nitride electronic devices, various color emitters, high power microwave sources and numerous other electronic applications.

Abstract: Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method is conducted in a reactor that is maintained at a pressure below one atmosphere for enhanced uniformity of gas flow and of MN product. The MN is then deposited on a substrate, on one or more seeds or it can self-nucleate on the walls of a growth chamber, to form high purity and uniform metal nitride material. The inventive MN material finds use in semiconductor materials, in nitride electronic devices, various color emitters, high power microwave sources and numerous other electronic applications.

Abstract: Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.

Abstract: This invention provides a process and apparatus for producing products of M-nitride materials wherein M=gallium (GaN), aluminum (AlN), indium (InN), germanium (GeN), zinc (ZnN) and ternary nitrides and alloys such as zinc germanium nitride or indium aluminum gallium nitride. This process and apparatus produce either free-standing single crystals, or deposit layers on a substrate by epitaxial growth or polycrystalline deposition. Also high purity M-nitride powders may be synthesized. The process uses an ammonium halide such as ammonium chloride, ammonium bromide or ammonium iodide and a metal to combine to form the M-nitride which deposits in a cooler region downstream from and/or immediately adjacent to the reaction area. High purity M-nitride can be nucleated from the vapor to form single crystals or deposited on a suitable substrate as a high density material.

Abstract: A ceramic metal halide arc tube is surrounded by a protective sleeve supported by a metal frame having current carrying wire frame members brazed into the metal ferrules of a PAR-lamp. Each frame member has an S-shaped bend which engages the lower end of the sleeve, and a spacer separates the upper ends of the frame to create a rigid self-supporting structure.

Abstract: A quartz protective sleeve surrounding a ceramic metal halide arc tube is supported by a pair of frame members received inside the sleeve. A short frame member extends only partially into the sleeve, while a long frame member extends through the sleeve and includes a loop which engages a dimple at the top of the lamp envelope. The sleeve is fitted over the frame members, which are spring loaded apart. Axial positioning may be provided by terminals or other features fixed to the frame members. In an alternative embodiment, shoulders for positioning the sleeve and terminals for connecting to the arc tube are formed integrally with the frame members.

Abstract: Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick layer on the backing plate, the backing plate is repeatedly placed in the processing furnace until a satisfactory thickness is attained. For the second approach, a properly shaped reaction vessel, the dense, thick Group III nitride crust that forms on top of the Group III metal during the process can be used directly or mechanically altered to meet the size requirements for a sputtering target holder.

Abstract: An apparatus according to the present invention is a finder-thinwall needle combination for central venous catheterization. The finder needle is slidably mounted in very close proximity to or coaxially with the thinwall needle. The tip of the finder needle initially extends a distance beyond the end of the thinwall needle, so that a technician may locate a central vein with the finder needle without significantly damaging a central artery. Then the technician may slide the thinwall needle forward along the finder needle into the vein. The present invention also encompasses a method for inserting a thinwall needle into a central vein without damaging a central artery. First, a technician finds a central vein with the sharp end portion of the finder needle. She then slides the thinwall needle forward relative to the finder needle such that the tip of the thinwall needle enters the vein.

Abstract: An automated cassette handler transports a cassette containing integrated circuit wafers between first and second elevators in a standardized mechanical interface (SMIF) system for integrated circuit processing. The handler is adapted to grip and transport the cassette while positively pushing the wafers into the cassette.

Abstract: An automated cassette handler is disclosed for transporting a cassette containing integrated circuit wafers between first and second elevators in a standardized mechanical interface (SMIF) system for integrated circuit processing. The handler is adapted to grip and transport the cassette while positively pushing the wafers into the cassette.

Abstract: An automated cassette handler for transporting a cassette containing integrated circuit wafers between first and second elevators in a standardized mechanical interface (SMIF) system for integrated circuit processing. The handler is adapted to grip and transport the cassette while positively pushing the wafers into the cassette.