Patents by Inventor John S. Guzek
John S. Guzek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240006331Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Applicant: Intel CorporationInventor: John S. GUZEK
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Publication number: 20230420400Abstract: A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Inventors: Pramod MALATKAR, Weng Hong TEH, John S. GUZEK, Robert L. SANKMAN
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Patent number: 11798892Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.Type: GrantFiled: January 14, 2021Date of Patent: October 24, 2023Assignee: Intel CorporationInventor: John S. Guzek
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Publication number: 20230197697Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a glass substrate, having a surface, including a through-glass-substrate via (TGV) and a cavity on the surface; a first die nested in the cavity; an insulating material on the surface of the glass substrate; a first conductive pillar and a second conductive pillar through the insulating material; a capacitor, in the insulating material, including a first conductive layer, on the surface of the glass substrate, electrically coupled to the TGV and the first conductive pillar forming a first plate of the capacitor, a dielectric layer on the first conductive layer; and a second conductive layer, on the dielectric layer, electrically coupled to the second conductive pillar forming a second plate of the capacitor; and a second die, on the insulating material, electrically coupled to the first die.Type: ApplicationFiled: December 16, 2021Publication date: June 22, 2023Applicant: Intel CorporationInventors: Srinivas V. Pietambaram, Tarek A. Ibrahim, Rahul N. Manepalli, John S. Guzek, Hamid Azimi
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Publication number: 20230187386Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a substrate having a first surface and an opposing second surface, the second surface having a cavity; a first die at least partially nested in the cavity; an insulating material on the second surface of the substrate, the insulating material having a first surface and an opposing second surface, wherein the first surface of the insulating material is at the second surface of the substrate; a planar inductor embedded in the insulating material, the planar inductor including a thin film at least partially surrounding a conductive trace; and a second die, at the second surface of the insulating material, electrically coupled to the first die.Type: ApplicationFiled: December 14, 2021Publication date: June 15, 2023Applicant: Intel CorporationInventors: Srinivas V. Pietambaram, Tarek A. Ibrahim, Rahul N. Manepalli, John S. Guzek, Hamid Azimi
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Publication number: 20230130944Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.Type: ApplicationFiled: December 27, 2022Publication date: April 27, 2023Inventors: Robert STARKSTON, Debendra MALLIK, John S. GUZEK, Chia-Pin CHIU, Deepak KULKARNI, Ravi V. MAHAJAN
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Publication number: 20230040850Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.Type: ApplicationFiled: October 24, 2022Publication date: February 9, 2023Inventors: Robert STARKSTON, Debendra MALLIK, John S. GUZEK, Chia-Pin CHIU, Deepak KULKARNI, Ravi V. MAHAJAN
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Patent number: 11515248Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.Type: GrantFiled: September 1, 2020Date of Patent: November 29, 2022Assignee: Intel CorporationInventors: Robert Starkston, Debendra Mallik, John S. Guzek, Chia-Pin Chiu, Deepak Kulkarni, Ravi V. Mahajan
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Publication number: 20220336229Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.Type: ApplicationFiled: June 27, 2022Publication date: October 20, 2022Inventors: Robert L. SANKMAN, John S. GUZEK
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Publication number: 20220172962Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.Type: ApplicationFiled: February 21, 2022Publication date: June 2, 2022Inventors: Robert L. Sankman, John S. Guzek
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Publication number: 20220068861Abstract: A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate.Type: ApplicationFiled: November 10, 2021Publication date: March 3, 2022Inventors: Pramod MALATKAR, Weng Hong TEH, John S. GUZEK, Robert L. SANKMAN
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Patent number: 11257688Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.Type: GrantFiled: May 11, 2020Date of Patent: February 22, 2022Assignee: Intel CorporationInventors: Robert L. Sankman, John S. Guzek
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Patent number: 11201128Abstract: A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate.Type: GrantFiled: December 23, 2015Date of Patent: December 14, 2021Assignee: Intel CorporationInventors: Pramod Malatkar, Weng Hong Teh, John S. Guzek, Robert L. Sankman
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Publication number: 20210134731Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.Type: ApplicationFiled: January 14, 2021Publication date: May 6, 2021Applicant: Intel CorporationInventor: John S. GUZEK
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Patent number: 10930596Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.Type: GrantFiled: September 30, 2016Date of Patent: February 23, 2021Assignee: Intel CorporationInventor: John S. Guzek
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Publication number: 20200395297Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.Type: ApplicationFiled: September 1, 2020Publication date: December 17, 2020Inventors: Robert STARKSTON, Debendra MALLIK, John S. GUZEK, Chia-Pin CHIU, Deepak KULKARNI, Ravi V. MAHAJAN
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Patent number: 10796988Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.Type: GrantFiled: June 7, 2018Date of Patent: October 6, 2020Assignee: Intel CorporationInventors: Robert Starkston, Debendra Mallik, John S. Guzek, Chia-Pin Chiu, Deepak Kulkarni, Ravi V. Mahajan
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Publication number: 20200273721Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Inventors: Robert L. Sankman, John S. Guzek
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Patent number: 10651051Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.Type: GrantFiled: October 5, 2017Date of Patent: May 12, 2020Assignee: Intel CorporationInventors: Robert L. Sankman, John S. Guzek
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Patent number: 10636769Abstract: Package assemblies for and methods of packaging integrated circuit chips are described. Disclosed package assemblies have spacers and recessed regions comprising IC chips. Architectural structures are provided that enable, for example, three dimensional (3D) packaging (or system in package (SiP) or multi-chip modules), systems-on-chip 3D packaging, and hybrid 3D bonding. Embodiments of the invention can be used, for example, to create logic-to-memory, memory-to-memory, and logic-to-logic interface stacking assemblies.Type: GrantFiled: September 10, 2018Date of Patent: April 28, 2020Assignee: Intel CorporationInventors: Weng Hong Teh, John S. Guzek, Shan Zhong