Patents by Inventor JOHN S. MASON, JR.

JOHN S. MASON, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivated transistors
    Patent number: 11342440
    Abstract: A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: May 24, 2022
    Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: Ishan Wathuthanthri, Ken Alfred Nagamatsu, William J. Sweet, James T. Kelliher, John S. Mason, Jr., Jonah Paul Sengupta
  • PASSIVATED TRANSISTORS
    Publication number: 20210028295
    Abstract: A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.
    Type: Application
    Filed: July 22, 2019
    Publication date: January 28, 2021
    Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: ISHAN WATHUTHANTHRI, KEN ALFRED NAGAMATSU, WILLIAM J. SWEET, JAMES T. KELLIHER, JOHN S. MASON, JR., JONAH PAUL SENGUPTA