Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: An accelerometer for reducing undesired attraction or repulsion forces between a proof mass and a cover. An exemplary accelerometer includes a proof mass, a base, a flexure that flexibly attaches the proof mass to the base, at least one double-ended tuning fork (DETF) attached at one end to the proof mass and at another end to the base, and a housing structure that encloses the proof mass within a cavity. A layer of graphene is located on at least a portion of the nonconductive surfaces within the housing structure. The nonconductive surfaces include a surface on the proof mass, the housing structure, the base, the flexure, or the DETF. The layer of graphene is attached to a heat sink and/or to an electrical charge dissipation component.

Abstract: An accelerometer for reducing undesired attraction or repulsion forces between a proof mass and a cover. An exemplary accelerometer includes a proof mass, a base, a flexure that flexibly attaches the proof mass to the base, at least one double-ended tuning fork (DETF) attached at one end to the proof mass and at another end to the base, and a housing structure that encloses the proof mass within a cavity. A layer of graphene is located on at least a portion of the nonconductive surfaces within the housing structure. The nonconductive surfaces include a surface on the proof mass, the housing structure, the base, the flexure, or the DETF. The layer of graphene is attached to a heat sink and/or to an electrical charge dissipation component.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: Methods for measuring thickness of an epitaxial layer of a wafer. An example method applies photoresist over the epitaxial layer, and then portions of the photoresist within a sacrificial region of the wafer are removed. Next, the epitaxial layer is isotropically etched through the removed portions of the photoresist until a portion of the silicon handle layer is exposed. The remaining photoresist layer is removed. Then, the silicon handle layer is anisotropically etched to form a well. Profile information of the epitaxial layer and the etched handle layer generated. Next, the thickness of the epitaxial layer is determined based on the profile information. The acceptability of the epitaxial layer may be determined based on the determined thickness of the epitaxial layer. If the epi layer is acceptable, then the geometry of devices that are to be etched into the epitaxial layer are determined based on the determined thickness.

Abstract: Methods for isotropically etching a monocrystalline silicon wafer. An example method includes applying a layer of material at least one of onto a first side or into a first side of the monocrystalline silicon wafer and isotropically etching a non-linear pit into the monocrystalline silicon wafer using an anisotropic etchant. The applied layer of material has a faster etch rate than the monocrystalline silicon wafer.

Abstract: According to the present invention, after manufacture of a disconnect fuse circuit, windows are opened in the insulating film overlying the second interconnect layer at all possible disconnection points, the disconnection points preferably being an exposure window that is aligned over a disconnect fuse circuit that includes a via that electrically connects electrical conductors disposed on different respective layers. This insulating film may consist of one or more layers of one or more materials, but preferentially consists of a single layer of silicon oxide. The wafer is then stored for later configuration. When the wafer is to be configured, a non-precision mask is manufactured. The wafer is coated with photoresist and patterned using the mask to produce disconnection holes in the photoresist at the desired disconnection points.