Patents by Inventor John S. Wei

John S. Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Minimally invasive implantable neurostimulation system
    Patent number: 11957893
    Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: April 16, 2024
    Assignee: Medtronic, Inc.
    Inventors: Brad C. Tischendorf, John E. Kast, Thomas P. Miltich, Gordon O. Munns, Randy S. Roles, Craig L. Schmidt, Joseph J. Viavattine, Christian S. Nielsen, Prabhakar A. Tamirisa, Anthony M. Chasensky, Markus W. Reiterer, Chris J. Paidosh, Reginald D. Robinson, Bernard Q. Li, Erik R. Scott, Phillip C. Falkner, Xuan K. Wei, Eric H. Bonde, David A. Dinsmoor, Duane L. Bourget, Forrest C M Pape, Gabriela C. Molnar, Joel A. Anderson, Michael J. Ebert, Richard T. Stone, Shawn C. Kelley, Stephen J. Roddy, Timothy J. Denison, Todd V. Smith
  • Minimally invasive implantable neurostimulation system
    Patent number: 11957894
    Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: April 16, 2024
    Assignee: Medtronic, Inc.
    Inventors: Anthony M. Chasensky, Bernard Q. Li, Brad C. Tischendorf, Chris J. Paidosh, Christian S. Nielsen, Craig L. Schmidt, David A. Dinsmoor, Duane L. Bourget, Eric H. Bonde, Erik R. Scott, Forrest C M Pape, Gabriela C. Molnar, Gordon O. Munns, Joel A. Anderson, John E. Kast, Joseph J. Viavattine, Markus W. Reiterer, Michael J. Ebert, Phillip C. Falkner, Prabhakar A. Tamirisa, Randy S. Roles, Reginald D. Robinson, Richard T. Stone, Shawn C. Kelley, Stephen J. Roddy, Thomas P. Miltich, Timothy J. Denison, Todd V. Smith, Xuan K. Wei
  • ANTI-SARS-COV-2 ANTIGEN BINDING POLYPEPTIDES, POLYPEPTIDE COMPLEXES AND METHODS OF USE THEREOF
    Publication number: 20240109955
    Abstract: Disclosed are antigen binding polypeptides and antigen binding polypeptide complexes (e.g., antibodies and antigen binding fragments thereof) having certain structural and/or functional features. Also disclosed are polynucleotides and vectors encoding such polypeptides and polypeptide complexes; host cells, pharmaceutical compositions and kits containing such polypeptides and polypeptide complexes; and methods of using such polypeptides and polypeptide complexes.
    Type: Application
    Filed: June 30, 2023
    Publication date: April 4, 2024
    Inventors: Juan LI, Chi-Jen WEI, Ronnie R. WEI, Zhi-Yong YANG, John R. MASCOLA, Gary J. NABEL, John MISASI, Amarendra PEGU, Lingshu WANG, Tongqing ZHOU, Misook CHOE, Olamide K. OLONINIYI, Bingchun ZHAO, Yi ZHANG, Eun Sung YANG, Man CHEN, Kwanyee LEUNG, Wei SHI, Nancy J. SULLIVAN, Peter D. KWONG, Richard A. KOUP, Barney S. GRAHAM, Peng HE
  • Body contact structure and method for the reduction of drain lag and gate lag in field effect transistors
    Publication number: 20080054300
    Abstract: A field effect transistor is formed on a substrate and includes a semiconductor channel region formed over the substrate and a metallic source region formed on the channel region. A metallic drain region is formed on the channel region and a metallic gate region formed on the channel region between the source and drain regions. A first metallic body contact region is formed adjacent the drain region and extending through the channel region to contact the substrate. The field effect transistor may further include a second metallic body contact region formed adjacent the source region and extending through the channel region to contact the substrate.
    Type: Application
    Filed: June 30, 2006
    Publication date: March 6, 2008
    Inventors: Philip Gene Nikkel, John S. Wei