Abstract: An implant is produced by fabricating first and second layers. The first layer of repeated and truncated building units is fused together to define pores. The second layer of repeated and truncated building units are fused together to define pores and fused onto the first layer of truncated building units. The first and the second layers form at least part of a porous portion of the implant. The formed porous portion is attached onto a base portion of an implant. The truncated building units of each of the first and the second layers are in the form of spatially overlapping three-dimensional shapes.

Abstract: A heating chamber system for heat-treating items infested by insects, and methods for manufacturing and using same. The heating chamber system includes an enclosed heating chamber; a bottom portion defining a portion of the enclosed heating chamber and includes a floor skirt and a floor; a top portion defining a portion of the enclosed heating chamber and including a plurality of sidewalls and a roof; and a collapsible architecture configured to support the top portion.

Abstract: The present invention provides a separator for use in an alkaline electrochemical cell comprising a polymer material and an inert filler comprising zirconium oxide. Examples of polymer materials useful in this invention include ABS polymer material, halogenated alkylene polymer material, and PE polymer material.

Abstract: A heating chamber system for heat-treating items infested by insects, and methods for manufacturing and using same. The heating chamber system includes an enclosed heating chamber; a bottom portion defining a portion of the enclosed heating chamber and includes a floor skirt and a floor; a top portion defining a portion of the enclosed heating chamber and including a plurality of sidewalls and a roof; and a collapsible architecture configured to support the top portion.

Abstract: The present invention provides a separator for use in an alkaline electrochemical cell comprising a polymer material and an inert filler comprising zirconium oxide. Examples of polymer materials useful in this invention include ABS polymer material, halogenated alkylene polymer material, and PE polymer material.

Abstract: A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.

Abstract: A method for detecting electrical arcing in a plasma process powered by an AC source comprises the steps of sampling at least one Fourier component of the AC source waveform distorted by the non-linear response of the plasma, determining when a change in amplitude of the component, irrespective of the direction of the change, exceeds any one of a plurality of different threshold levels, and determining the duration that each such threshold is exceeded. Each threshold is a predetermined fraction of a running average of the amplitude of the component.

Abstract: A method for determining optimum plasma chamber cleaning cycles based on an electrical precursor signal. Polymer build up on the interior wall of plasma chamber 1 during normal production runs is monitored by observing the phase of the fundamental RF signal on a pre-selected baseline process. At a predetermined level of this signal, the chamber processing is stopped and the chamber walls are cleaned.

Abstract: A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.

Abstract: A method of fault classification in a plasma process chamber powered by an RF source includes initially running a plurality of different baseline plasma processes on the chamber. For each baseline process, the magnitudes of a plurality of Fourier components of delivered RF power are determined and stored as an impedance fingerprint for that baseline process. In the case of a fault, one or more of the baseline processes is repeated according to a predetermined decision tree to determine the current fingerprints and classify the fault by comparing the current fingerprints with the original fingerprints.

Abstract: A method of fault detection is described for use in a plasma process chamber powered by an RF source and subject to periodic standard preventive maintenance. Prior to a production run, the changes in magnitude of a plurality of Fourier components of the RF source resulting from known changes in a plurality of process conditions are determined and a single parameter which is a linear combination of a selected subset of said components is constructed. The construction is such that the combination is relatively sensitive to pre-selected process changes and relatively insensitive to said standard preventive maintenance. Then, during the production run, the single parameter is monitored to determine if there is a fault in the plasma process.

Abstract: A method of fault detection is described for use in a plasma process chamber powered by an RF source and subject to periodic standard preventive maintenance. Prior to a production run, the changes in magnitude of a plurality of Fourier components of the RF source resulting from known changes in a plurality of process conditions are determined and a single parameter which is a linear combination of a selected subset of said components is constructed. The construction is such that the combination is relatively sensitive to pre-selected process changes and relatively insensitive to said standard preventive maintenance. Then, during the production run, the single parameter is monitored to determine if there is a fault in the plasma process.

Abstract: In a method of manufacturing a miniature multilayer device 10 a low open area dielectric layer 18 is selectively etched through to an underlying conductive region 16 using an electrically conducting medium such as a plasma 24. The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device 10 just as the final portion of the dielectric layer is removed.

Abstract: A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber 1 is based on an electrical precursor signal. Polymer build up on a plasma chamber wall during normal chamber conditioning is monitored by observing components of the fundamental RF signal. After a pre-determined number of wafers has been run, a predictive model is used to determine the total number of wafers needed to complete the conditioning cycle.

Abstract: A water conditioner valve configured for use with a tank in a water conditioning system, including a main housing a working portion disposed within the main housing and further including at least one valve chamber, and at least a portion of the working portion is mounted within the tank.

Abstract: A method for determining optimum plasma chamber cleaning cycles based on an electrical precursor signal. Polymer build up on the interior wall of plasma chamber 1 during normal production runs is monitored by observing the phase of the fundamental RF signal on a pre-selected baseline process. At a predetermined level of this signal, the chamber processing is stopped and the chamber walls are cleaned.

Abstract: A method of fault classification in a plasma process chamber powered by an RF source comprises initially running a plurality of different baseline plasma processes on the chamber. For each baseline process, the magnitudes of a plurality of Fourier components of delivered RF power are determined and stored as an impedance fingerprint for that baseline process. In the case of a fault, one or more of the baseline processes is repeated according to a predetermined decision tree to determine the current fingerprints and classify the fault by comparing the current fingerprints with the original fingerprints.

Abstract: A water conditioner valve configured for use with a tank in a water conditioning system, including a main housing a working portion disposed within the main housing and further including at least one valve chamber, and at least a portion of the working portion is mounted within the tank.

Abstract: A method of fault identification in a plasma process powered by an RF source comprises initially determining, in respect of a given baseline plasma process, the changes in magnitude of a plurality of Fourier components of the RF source resulting from changes in a plurality of the process input parameters from their baseline values. These magnitude changes are stored as reference data. During a subsequent production run, the plasma process is monitored for faults and if one is found the baseline process is repeated with input parameter values nominally the same as the original baseline values. The changes in the Fourier components from the original baseline values are determined and compared with the reference data to determine which input parameter(s) have changed.

Abstract: In a method of manufacturing a miniature multilayer device 10 a low open area dielectric layer 18 is selectively etched through to an underlying conductive region 16 using an electrically conducting medium such as a plasma 24. The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device 10 just as the final portion of the dielectric layer is removed.