Abstract: The present invention relates to a system that cycles brushes on a tenter frame system. When the bristles of first brush becomes engorged with latex, the system can move the engorged brush out of the way and move a fresh brush into operation. An operator may then replace the engorged brush with another fresh brush without stopping the tenter line.

Abstract: A structure for high voltage input stage for deep submicron is provided that does not include native devices. This structure is able to maintain high speed functionality without jeopardizing device reliability or DC (direct current) power consumption. A circuit apparatus includes a first stage that receives an input signal having an input voltage range and generates a first intermediary output signal and a second intermediary output signal. The first stage includes an N-type field effect transistor (NFET) circuit that receives the input signal and generates the first intermediary output signal, where the first intermediary output signal substantially follows the input signal in a first region of the input voltage range and is substantially constant in a second region of the input voltage range.

Abstract: Aspects of the subject technology allow an output driver to be implemented using one or more transistors having an oxide-breakdown voltage below the output voltage swing of the output driver. The output driver can include one or more source followers, where a source follower provides voltage-level shifting of a voltage before the voltage is supplied to a gate of a transistor to prevent a source-to-gate voltage or a gate-to-source voltage of the transistor from exceeding the oxide-breakdown voltage of the transistor.

Abstract: Aspects of the subject technology allow an output driver to be implemented using one or more transistors having an oxide-breakdown voltage below the output voltage swing of the output driver. The output driver can include one or more source followers, where a source follower provides voltage-level shifting of a voltage before the voltage is supplied to a gate of a transistor to prevent a source-to-gate voltage or a gate-to-source voltage of the transistor from exceeding the oxide-breakdown voltage of the transistor.

Abstract: A data message originally addressed to a first mobile device is forwarded to a second mobile device in a wireless telecommunications network. Data messages may include text messages, picture messages, and video messages. In addition to forwarding data messages, other optional data message forwarding features are provided such as a copy feature that allows for a forwarded message to be copied back to the original addressee, and an invisible feature that prevents a data message sender from knowing that a data message has been forwarded by the data message addressee.

Abstract: A data message originally addressed to a first mobile device is forwarded to a second mobile device in a wireless telecommunications network. Data messages may include text messages, picture messages, and video messages. In addition to forwarding data messages, other optional data message forwarding features are provided such as a copy feature that allows for a forwarded message to be copied back to the original addressee, and an invisible feature that prevents a data message sender from knowing that a data message has been forwarded by the data message addressee.

Abstract: A system and medium are provided for forwarding a data message originally addressed to a first mobile device to a second mobile device in a wireless telecommunications network. Data messages may include text messages, picture messages, and video messages. In addition to forwarding data messages, other optional data message forwarding features are provided such as a copy feature that allows for a forwarded message to be copied back to the original addressee, and an invisible feature that prevents a data message sender from knowing that a data message has been forwarded by the data message addressee.

Abstract: An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.

Abstract: An apparatus for elastically gripping and holding an article, comprising: a flexible elongated handle member lying generally along a longitudinal handle axis, the handle defining an interior carrying opening proximate one end, and including a strap coupling area spaced from the carrying opening; a flexible, elastic strap coupled to the handle member at the strap-coupling area and extending therefrom to a distal end; and a cooperating releasable coupling structure, partially proximate the distal end of the strap and also partially coupled to the handle member, to allow the strap to be releasably fastened to the handle member; whereby the strap can be stretched tightly around an article, and then coupled to the handle member, to grip and hold the article. The apparatus allows the article to be carried or hung by the carrying opening in the handle member.