Abstract: Substituted paracyclophanes are particularly useful as precursors in the formation of a cross-linkable polymer on a deposition substrate such as an electronic device being processed. The paracyclophane precursor including a cross-linkable substituent such as an alkynyl is cracked at the phenyl linkages. The substrate is subjected to the cracked precursor. As a result, an organic polymer is formed on the substrate. Cross-linking of the polymer through reaction, e.g. thermally induced reaction, of the cross-linkable substituents produces a thermally stable cross-linked polymer. The deposition of such cross-linked polymer is particularly useful for to sealing ultra low k dielectric materials used in the damascene process in the production of integrated circuits. Alternatively the polymer is also advantageous as an adhesive in wafer-to-wafer bonding. Alternatively, the polymer is useful as a hardmask to replace silicon nitride and silicon carbide in the back-end-of-the-line processing of electronic devices.

Abstract: Methods of use of parylene based polymers with porous ultra-low ? dielectric materials and use of parylene barriers in integrated circuit fabrication are presented.

Abstract: The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60° C. to <260° C. The layer is formed by sequentially pulsing into a chamber containing the surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.

Abstract: The present invention relates to a method for forming a conformal coating having a reactive surface. In the method, an ultrathin layer composed of a polymer having repeating units derived from unsubstituted p-xylylene, substituted p-xylylene, phenylene vinylene, phenylene ethynylene, 1,4-methylene naphthalene, 2,6-methylene naphthalene, 1,4-vinylene naphthalene, 2,6-vinylene naphthalene, 1,4-ethynylene naphthalene, 2,6-ethynylene naphthalene, combinations thereof, precursors therefor or combinations of precursors therefor, is deposited on a substrate by a thermal CVD process. The ultrathin layer is optionally exposed to a source of oxygen and then exposed to a reagent selected from ammonium hydroxide, tetramethylammonium hydroxide, ammonium sulfide, dimethyl sulfide, thioacetic acid, sodium hydrosulfide, sodium sulfide, hydrazine, acetamide and combinations thereof. The surface may be modified readily after the treatment.