Patents by Inventor John Slonczewski

John Slonczewski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetically lined conductors
    Patent number: 7170173
    Abstract: A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The corners of the conductor where the second surface and the sides meet are rounded. The rounded corners have been found to improve the concentration of magnetic flux in the magnetic liner.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: January 30, 2007
    Assignees: Infineon Technologies Aktiengesellschaft, International Business Machines Corporation
    Inventors: Rainer Leuschner, John Slonczewski
  • Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
    Publication number: 20050104101
    Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
    Type: Application
    Filed: November 19, 2003
    Publication date: May 19, 2005
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Sun, Rolf Allenspach, Stuart Stephen Parkin, John Slonczewski, Bruce Terris
  • MAGNETICALLY LINED CONDUCTORS
    Publication number: 20040207086
    Abstract: A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The corners of the conductor where the second surface and the sides meet are rounded. The rounded corners have been found to improve the concentration of magnetic flux in the magnetic liner.
    Type: Application
    Filed: April 17, 2003
    Publication date: October 21, 2004
    Inventors: Rainer Leuschner, John Slonczewski
  • Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
    Patent number: 6590750
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: July 8, 2003
    Assignee: International Business Machines Corporation
    Inventors: David William Abraham, Philip Edward Batson, John Slonczewski, Philip Louis Trouilloud, William Joseph Gallagher, Stuart Parkin
  • Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
    Patent number: 6452764
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: September 17, 2002
    Assignee: International Business Machines Corporation
    Inventors: David William Abraham, Philip Edward Batson, William Joseph Gallagher, Stuart Parkin, John Slonczewski, Philip Louis Trouilloud
  • LIMITING MAGNETORESISTIVE ELECTRICAL INTERACTION TO A PREFERRED PORTION OF A MAGNETIC REGION IN MAGNETIC DEVICES
    Publication number: 20010040778
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Application
    Filed: February 10, 1998
    Publication date: November 15, 2001
    Inventors: DAVID WILLIAM ABRAHAM, PHILIP EDWARD BATSON, JOHN SLONCZEWSKI, PHILIP LOUIS TROUILLOUD, WILLIAM JOSEPH GALLAGHER, STUART PARKIN