Abstract: Circuits and oxide-free quantum dot vertical-cavity surface-emitting lasers (OQ-VCSELs) are bonded to a front side of a directly modulated photonic wafer-scale interposer (PWSI). The PWSI includes waveguides for communication among the circuits and OQ-VCSELs. Electrical data is sent by a first circuit to an OQ-VCSEL. A degree of freedom (DoF) of a light beam emitted by the OQ-VCSEL is modulated. The degree of freedom can include an intensity, a phase, a mode, or a wavelength. The emitted light beam comprises a degree of freedom modulated beam (DFMB) that is based on the sent electrical data. The DFMB is coupled optically to a waveguide within the PWSI. The waveguide is further coupled to an optical decoding element. The DFMB is decoded by the optical decoding element into electrical data that was sent by the first circuit. The electrical data that was decoded is delivered to a second circuit.

Abstract: A first circuit sends electrical data. The electrical data is sent to a vertical-cavity surface-emitting laser (VCSEL). A wavelength of the VCSEL is modulated. The modulating includes emitting, by the VCSEL, a wavelength-modulated beam (WMB). The WMB is based on the electrical data that was sent. The modulating can be based on injecting current into the VCSEL. The modulating can be based on VCSEL chirp. The WMB is coupled optically to an optical medium. The optical medium comprises a waveguide or a fiberoptic cable. The coupling optically is accomplished using a grating coupler, a mirror, or an off-axis diffractive lens. The optical medium is further coupled to a wavelength-dependent optical element (WDOE). The WDOE decodes the WMB into the electrical data that was sent. The electrical data is delivered to a second circuit.

Abstract: A plurality of circuits and a plurality of quantum dot vertical-cavity surface-emitting lasers (QD-VCSELs) are bonded to a front side of a directly modulated photonic wafer-scale interposer (PWSI). The PWSI includes a plurality of waveguides. Electrical data is sent by a first circuit within the plurality of circuits to a QD-VCSEL. A degree of freedom (DoF) of a light beam emitted by the QD-VCSEL is modulated. The degree of freedom can include intensity, polarization, mode, wavelength, and so on. The emitted light beam comprises a degree of freedom modulated beam (DFMB) based on the electrical data that was sent. The DFMB is coupled optically to a waveguide. The waveguide is further coupled to an optical decoding element. The DFMB is decoded by the optical decoding element into the electrical data. The electrical data that was decoded is delivered to a second circuit.

Abstract: Waveguides are fabricated within a photonic wafer-scale interposer (PWSI). The waveguides include a first waveguide and a second waveguide. The first waveguide and the second waveguide are within a physical spacing within the PWSI which enables evanescent coupling for at least a parallel distance. A sub-wavelength barrier is inserted between the first waveguide and the second waveguide. The sub-wavelength barrier is disposed between the first waveguide and the second waveguide for at least the parallel distance. A first modulated light beam is emitted through the first waveguide by a first optical transmitter, and a second modulated light beam is emitted through the second waveguide by a second optical transmitter. The optical transmitters can comprise optical modulators. The sub-wavelength barrier reduces or eliminates the evanescent coupling between the first modulated light beam and the second modulated light beam over the parallel distance.

Abstract: A device includes an optical modulator to modulate light to generate a modulated signal. An optical equalizer (OEQ) circuit includes a power splitter to receive the modulated signal, couple a first portion of the modulated signal onto a direct path, and couple a second portion of the modulated signal onto a delay path. A delay line introduces a delay into the second portion of the modulated signal traversing the delay path, and a phase shifter shifts a phase of the delayed modulated signal. The OEQ circuit includes a direct path amplifier to amplify the first portion of the modulated signal traversing the direct path and/or a delay path amplifier to amplify the second portion of the modulated signal traversing the delay path. A combiner combines the modulated signals received from the direct path and the delay path to generate a combined modulated signal.

Abstract: An optoelectronic device includes an electrical transmission line comprising a first conductor and a second conductor formed on a electrical circuit substrate, a first plurality of electrically conductive structures formed on a surface of the first conductor and a second plurality of electrically conductive structures formed on a surface of the second conductor, a waveguide formed on a photonic integrated circuit (PIC), and a plurality of conversion segments formed on the PIC. Each conversion segment includes a first conversion structure electrically coupled to a respective one of the first plurality of electrically conductive structures and a second conversion structure electrically coupled to the corresponding one of the second plurality of electrically conductive structures, the first conversion structure and second conversion structure being configured for optoelectronic interaction with the waveguide.

Abstract: A device includes a heating element occupying at least a portion of a layer of an integrated circuit (IC). The IC includes a plurality of layers stacked in a lamination direction and a target component. A plurality of thermally conductive structures extends from the heating element through one or more layers of the plurality of layers of the IC. The plurality of thermally conductive structures overlaps at least a portion of the target component in a lateral direction perpendicular to the lamination direction.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.