Patents by Inventor John Sonkoly

John Sonkoly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radio-frequency loss reduction for integrated devices
    Patent number: 11791341
    Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: October 17, 2023
    Assignee: OpenLight Photonics, Inc.
    Inventors: John Sonkoly, Erik Johan Norberg
  • RADIO-FREQUENCY LOSS REDUCTION FOR INTEGRATED DEVICES
    Publication number: 20220005832
    Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
    Type: Application
    Filed: September 16, 2021
    Publication date: January 6, 2022
    Inventors: John Sonkoly, Erik Johan Norberg
  • RADIO-FREQUENCY LOSS REDUCTION FOR INTEGRATED DEVICES
    Publication number: 20210343745
    Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
    Type: Application
    Filed: April 30, 2020
    Publication date: November 4, 2021
    Inventors: John Sonkoly, Erik Johan Norberg
  • Radio-frequency loss reduction for integrated devices
    Patent number: 11164893
    Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: November 2, 2021
    Assignee: Juniper Networks, Inc.
    Inventors: John Sonkoly, Erik Johan Norberg